-
2
-
-
0008118888
-
New Abrasive Trends in Manufacturing of Silicon Wafers
-
American Society For Precision Engineering, April, St. Louis, Missouri
-
Tricard, M., Kassir, S., Herron, P., and Pei, Z.J., 1998, "New Abrasive Trends in Manufacturing of Silicon Wafers," Silicon Machining Symposium, American Society For Precision Engineering, April, St. Louis, Missouri.
-
(1998)
Silicon Machining Symposium
-
-
Tricard, M.1
Kassir, S.2
Herron, P.3
Pei, Z.J.4
-
3
-
-
0033901365
-
Plane silicon wafer technology
-
April 2000
-
Mozer, A., 2000, "Plane silicon wafer technology," European Semiconductor, April 2000, pp. 29-30.
-
(2000)
European Semiconductor
, pp. 29-30
-
-
Mozer, A.1
-
5
-
-
0029403766
-
Fracture strength of large diameter silicon wafers
-
November
-
Bawa, M.S., Petro, E.F., and Grimes, H.M., 1995, "Fracture strength of large diameter silicon wafers," Semiconductor International, November, pp. 115-118.
-
(1995)
Semiconductor International
, pp. 115-118
-
-
Bawa, M.S.1
Petro, E.F.2
Grimes, H.M.3
-
6
-
-
0004278851
-
Method of manufacturing semiconductor mirror wafers
-
European Patent Application, EP0782179A2, Bulletin 1997/27
-
Fukami, T., Masumura, H., Suzuki, K., and Kudo, H., 1997, "Method of manufacturing semiconductor mirror wafers," European Patent Application, EP0782179A2, Bulletin 1997/27.
-
(1997)
-
-
Fukami, T.1
Masumura, H.2
Suzuki, K.3
Kudo, H.4
-
7
-
-
0010541578
-
Wafer processing method and equipment therefore
-
US Patent 5,882,539, March 16, 1999
-
Hasegawa, F., Kuruda, Y., and Yamada, M., 1999, "Wafer processing method and equipment therefore," US Patent 5,882,539, March 16, 1999.
-
(1999)
-
-
Hasegawa, F.1
Kuruda, Y.2
Yamada, M.3
-
8
-
-
33646647667
-
Method of manufacturing a monocrystalline semiconductor wafer with mirror-finished surface including a gas phase etching and a heating step, and wafers manufactured by said method
-
European Patent Application, EP0798766A1, Bulletin 1997/40
-
Oishi, H., 1997, Method of manufacturing a monocrystalline semiconductor wafer with mirror-finished surface including a gas phase etching and a heating step, and wafers manufactured by said method, European Patent Application, EP0798766A1, Bulletin 1997/40.
-
(1997)
-
-
Oishi, H.1
-
9
-
-
0035314230
-
Fine grinding of silicon wafers
-
Pei, Z.J., and Strasbaugh, A., 2001, "Fine grinding of silicon wafers," International Journal of Machine Tools and Manufacture, Vol. 41, No. 5, pp. 659-672.
-
(2001)
International Journal of Machine Tools and Manufacture
, vol.41
, Issue.5
, pp. 659-672
-
-
Pei, Z.J.1
Strasbaugh, A.2
-
10
-
-
38849198849
-
Abrasive machining of silicon
-
Tonshoff, H.K., Schmieden, W.V., Inasaki, I., Konig, W., and Spur, G., 1990, "Abrasive machining of silicon," Annals of CIRP, Vol. 39, No. 2, pp. 621-630.
-
(1990)
Annals of CIRP
, vol.39
, Issue.2
, pp. 621-630
-
-
Tonshoff, H.K.1
Schmieden, W.V.2
Inasaki, I.3
Konig, W.4
Spur, G.5
-
11
-
-
0024133633
-
Comparative study of advanced slicing techniques for silicon
-
edited by S. Chandrasekar, R. Komanduri, W. Daniels and W. Rapp, The American Society of Mechanical Engineers, New York, NY
-
Werner, P.G., and Kenter, I.M., 1988, "Comparative study of advanced slicing techniques for silicon," Intersociety symposium on machining of advanced ceramic materials and components, edited by S. Chandrasekar, R. Komanduri, W. Daniels and W. Rapp, The American Society of Mechanical Engineers, New York, NY.
-
(1988)
Intersociety Symposium on Machining of Advanced Ceramic Materials and Components
-
-
Werner, P.G.1
Kenter, I.M.2
-
12
-
-
0022009190
-
I.D. sawing - Diameters increase
-
Buttner, A., 1985, "I.D. sawing - diameters increase," Industrial Diamond Review, No. 2, pp. 77-79.
-
(1985)
Industrial Diamond Review
, Issue.2
, pp. 77-79
-
-
Buttner, A.1
-
13
-
-
0010539792
-
Method of manufacturing semiconductor wafers
-
European patent application, EP0798405A2
-
Kato, T., Masumura, H., Okuni, S., and Kudo, H., 1997, "Method of manufacturing semiconductor wafers," European patent application, EP0798405A2.
-
(1997)
-
-
Kato, T.1
Masumura, H.2
Okuni, S.3
Kudo, H.4
-
14
-
-
0001784415
-
Development of sequential grinding-polishing process applicable to large-size Si wafer finishing
-
Yasunaga, N., Takashina, M., and Itoh, T., (1997, "Development of sequential grinding-polishing process applicable to large-size Si wafer finishing," Advances in Abrasive Technology, Proceedings of the International Symposium, Sydney, Australia, July 8-10, 1997, pp. 96-100.
-
(1997)
Advances in Abrasive Technology, Proceedings of the International Symposium, Sydney, Australia, July 8-10, 1997
, pp. 96-100
-
-
Yasunaga, N.1
Takashina, M.2
Itoh, T.3
-
15
-
-
0025439729
-
Characterization of mirror-like wafer surfaces using the magic mirror method
-
DOI 10.1016/0022-0248(90)90221-6
-
Hahn, S., Kugimiya, K., Yamashita, M., Blaustein, P.R., and Takahashi, K., 1990, "Characterization of mirror-like wafer surfaces using the magic mirror method," Journal of Crystal Growth, Vol. 103, No. 1-4, pp. 423-432. (Pubitemid 20737207)
-
(1990)
Journal of Crystal Growth
, vol.103
, Issue.1-4
, pp. 423-432
-
-
Hahn, S.1
Kugimiya, K.2
Yamashita, M.3
Blaustein, P.R.4
Takahashi, K.5
-
16
-
-
0026634583
-
Characterization of mirror-polished Si wafers and advanced Si substrate structures using the magic mirror method
-
Hahn, S., Kugimiya, K., Vojtechovsky, K., Sifalda, M., Yamashita, M., Blaustein, P.R., and Takahashi, K., 1992, "Characterization of mirror-polished Si wafers and advanced Si substrate structures using the magic mirror method," Semiconductor Science and Technology, Vol. 7, No. 1A, pp. 80-85.
-
(1992)
Semiconductor Science and Technology
, vol.7
, Issue.1 A
, pp. 80-85
-
-
Hahn, S.1
Kugimiya, K.2
Vojtechovsky, K.3
Sifalda, M.4
Yamashita, M.5
Blaustein, P.R.6
Takahashi, K.7
-
17
-
-
0026630809
-
Characterization of deformations and texture defects on polished wafers of III-V compound crystals by the magic mirror method
-
Shiue, C.C., Lie, K.H., and Blaustein, P.R., 1992, "Characterization of deformations and texture defects on polished wafers of III-V compound crystals by the magic mirror method," Semiconductor Science and Technology, Vol. 7, No. 1A, pp. 95-97.
-
(1992)
Semiconductor Science and Technology
, vol.7
, Issue.1 A
, pp. 95-97
-
-
Shiue, C.C.1
Lie, K.H.2
Blaustein, P.R.3
-
18
-
-
0003027920
-
Abrasive technology for wafer lapping
-
Dudley, J. A., 1986, "Abrasive technology for wafer lapping," Microelectronic Manufacturing and Testing, V. 4, No. 4, pp. 1-6.
-
(1986)
Microelectronic Manufacturing and Testing
, vol.4
, Issue.4
, pp. 1-6
-
-
Dudley, J.A.1
-
19
-
-
0003761608
-
Method of processing semiconductor wafers
-
Y. US Patent 6,114,245, September 5
-
Vandamme, R., Y. Xin, Y., and Z.J. Pei, 2000, "Method of processing semiconductor wafers," US Patent 6,114,245, September 5.
-
(2000)
-
-
Vandamme, R.1
Xin, Y.2
Pei, Z.J.3
-
20
-
-
0037063907
-
Finite element analysis for grinding and lapping of wire-sawn silicon wafers
-
submitted to
-
Liu, W., Pei, Z.J., and Xin, X.J., 2002, "Finite element analysis for grinding and lapping of wire-sawn silicon wafers," submitted to Journal of Materials Processing Technology.
-
(2002)
Journal of Materials Processing Technology
-
-
Liu, W.1
Pei, Z.J.2
Xin, X.J.3
-
21
-
-
0142148462
-
Semiconductor wafer surface grinding method - Involves reducing suction pressure of semiconductor wafer to base plate during generation of spark during grinding process
-
Japanese patent, JP9248758A, September 22
-
Shinetsu, H.K., 1997, "Semiconductor wafer surface grinding method - involves reducing suction pressure of semiconductor wafer to base plate during generation of spark during grinding process," Japanese patent, JP9248758A, September 22.
-
(1997)
-
-
Shinetsu, H.K.1
-
22
-
-
0011696335
-
Grinding process and apparatus for planarizing sawed wafers
-
US Patent 5,964,646, Oct. 12, 1999
-
Kassir, S.M., and Walsh, T.A., 1999, "Grinding process and apparatus for planarizing sawed wafers," US Patent 5,964,646, Oct. 12, 1999.
-
(1999)
-
-
Kassir, S.M.1
Walsh, T.A.2
-
23
-
-
0000828193
-
Surface grinding in silicon wafer manufacturing
-
Pei, Z.J., and Fisher, G., 2001, "Surface grinding in silicon wafer manufacturing," Transactions of The North American Manufacturing Research Institution of SME, Vol. 29, pp. 279-286.
-
(2001)
Transactions of the North American Manufacturing Research Institution of SME
, vol.29
, pp. 279-286
-
-
Pei, Z.J.1
Fisher, G.2
-
24
-
-
0142241548
-
Modeling of waviness reduction in silicon wafer grinding by finite element method
-
submitted to
-
Xin, X.J., Liu, W.J., and Pei, Z.J., 2002, "Modeling of waviness reduction in silicon wafer grinding by finite element method," submitted to International Conference on Modeling and Analysis of Semiconductor Manufacturing (MASM 2002), Tempe, Arizona, April 10-12, 2002.
-
(2002)
International Conference on Modeling and Analysis of Semiconductor Manufacturing (MASM 2002), Tempe, Arizona, April 10-12, 2002
-
-
Xin, X.J.1
Liu, W.J.2
Pei, Z.J.3
|