메뉴 건너뛰기




Volumn 43, Issue 1, 2003, Pages 7-16

Finite element analysis for grinding of wire-sawn silicon wafers: A designed experiment

Author keywords

Design of experiment; Factorial design; Finite element analysis; Grinding; Lapping; Machining; Material removal; Semiconductor material; Silicon wafers; Slicing

Indexed keywords

FINITE ELEMENT METHOD; GRINDING (COMMINUTION); MACHINING; SEMICONDUCTOR MATERIALS;

EID: 0037210538     PISSN: 08906955     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0890-6955(02)00167-0     Document Type: Article
Times cited : (45)

References (24)
  • 3
    • 0033901365 scopus 로고    scopus 로고
    • Plane silicon wafer technology
    • April
    • Mozer A. Plane silicon wafer technology. European Semiconductor. April:2000;29-30.
    • (2000) European Semiconductor , pp. 29-30
    • Mozer, A.1
  • 9
    • 0024133633 scopus 로고    scopus 로고
    • Comparative study of advanced slicing techniques for silicon
    • S. Chandrasekar, R. Komanduri, W. Daniels, W. Rapp (Eds.), The American Society of Mechanical Engineers, New York, NY.
    • P.G. Werner, I.M. Kenter, 1988. Comparative study of advanced slicing techniques for silicon, Intersociety symposium on machining of advanced ceramic materials and components, S. Chandrasekar, R. Komanduri, W. Daniels, W. Rapp (Eds.), The American Society of Mechanical Engineers, New York, NY.
    • Intersociety symposium on machining of advanced ceramic materials and components
    • Werner, P.G.1    Kenter, I.M.2
  • 10
    • 0022009190 scopus 로고
    • I.D. sawing - Diameters increase
    • Buttner A. I.D. sawing - Diameters increase. Industrial Diamond Review. 2:1985;77-79.
    • (1985) Industrial Diamond Review , vol.2 , pp. 77-79
    • Buttner, A.1
  • 11
    • 0001784415 scopus 로고    scopus 로고
    • Development of sequential grinding-polishing process applicable to large-size Si wafer finishing, Advances in Abrasive Technology
    • Sydney, Australia, July 8-10
    • N. Yasunaga, M. Takashina, T. Itoh, 1997. Development of sequential grinding-polishing process applicable to large-size Si wafer finishing, Advances in Abrasive Technology, Proceedings of the International Symposium, Sydney, Australia, July 8-10, 96-100.
    • (1997) Proceedings of the International Symposium , pp. 96-100
    • Yasunaga, N.1    Takashina, M.2    Itoh, T.3
  • 15
    • 0026630809 scopus 로고
    • Characterisation of deformations and texture defects on polished wafers of III-V compound crystals by the magic mirror method
    • Shiue C.C., Lie K.H., Blaustein P.R. Characterisation of deformations and texture defects on polished wafers of III-V compound crystals by the magic mirror method. Semiconductor Science and Technology. 7:(1A):1992;95-97.
    • (1992) Semiconductor Science and Technology , vol.7 , Issue.1 A , pp. 95-97
    • Shiue, C.C.1    Lie, K.H.2    Blaustein, P.R.3
  • 17
    • 0037063907 scopus 로고    scopus 로고
    • Finite element analysis for grinding and lapping of wire-sawn silicon wafers
    • Liu W., Pei Z.J., Xin X.J. Finite element analysis for grinding and lapping of wire-sawn silicon wafers. Journal of Materials Processing Technology. 129:(1-3):2002;2-9.
    • (2002) Journal of Materials Processing Technology , vol.129 , Issue.1-3 , pp. 2-9
    • Liu, W.1    Pei, Z.J.2    Xin, X.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.