A study on surface grinding of 300 mm silicon wafers

International Journal of Machine Tools and Manufacture

Volumn 42, Issue 3, 2002, Pages 385-393

  Pei, Z J ^a  

^a 129 Seaton Hall   (United States)

Author keywords

Ceramic machining; Grinding; Grinding marks; Material removal; Semiconductor materials; Silicon; Subsurface damage; Surface roughness

Indexed keywords

CRACKS; INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SILICON WAFERS; SURFACE ROUGHNESS;

SURFACE GRINDING;

GRINDING (MACHINING);

EID: 0036467624     PISSN: 08906955     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0890-6955(01)00122-5     Document Type: Article

References (12)

1. Plane silicon wafer technology
2. New abrasive trends in manufacturing of silicon wafers
3. First 300 mm wafer rolls off fab line-Siemens-Motorola joint venture bears fruit after one year
4. Fracture strength of large diameter silicon wafers
5. Abrasive machining of silicon
6. Fine grinding of silicon wafers
7. Grinding-induced subsurface cracks in silicon wafers
8. An etch for delineation of defects in silicon
9. Fine grinding of silicon wafers: Designed experiments