Theoretical investigation of nitrogen-doping effect on native defect aggregation processes in silicon

Materials Research Society Symposium - Proceedings

Volumn 719, Issue , 2002, Pages 79-85

  Kageshima, H ^a   Taguchi, A ^a   Wada, K ^b  

^a NTT Basic Research Laboratories   (Japan)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ATOMS; CRYSTAL DEFECTS; NITROGEN; SEMICONDUCTOR DOPING;

NATIVE DEFECTS;

SILICON;

EID: 0036451517     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-719-f3.3     Document Type: Conference Paper

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