Infrared absorption analysis of nitrogen in Czochralski silicon

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 63-68

  Yamanaka, Y ^a   Harada, H ^a   Tanahashi, K ^a   Mikayama, T ^a   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Defects; Infrared absorption; Nitrogen; Oxygen; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL);

INFRARED ABSORPTION ANALYSIS; NITROGEN CONCENTRATION; NITROGEN MEASUREMENT; OXYGEN PRECIPITATION; VOID FORMATION SUPPRESSION;

SILICON;

EID: 0036131449     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)