Octahedral void structure observed in grown-in defects in the bulk of standard Czochralski-Si for MOS LSIs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1781-1785

  Ueki, Takemi ^a   Itsumi, Manabu ^a   Takeda, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

AES; Czochralski Si; ED pattern; EDS; Grown in defect; LSTD; TEM

Indexed keywords

EID: 0347399041     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1781     Document Type: Article

References (12)

1. M. Itsumi and F. Kiyosumi: Appl. Phys. Lett. 40 (1982) 496.
2. K. Tempelhoff, F. Spiegelberg, R. Gleichmann and D. Wruck: Phys. Stat. Sol. 56 (1979) 213.
3. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki: Jpn. J. Appl. Phys. 29 (1990) L1947.
4. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama: Semicond. Sci. Technol. 7 (1992) A135.
5. S. Umeno, S. Sadamitsu, H. Murakami, M. Hourai, S. Sumita and T. Shigemitsu: Jpn. J. Appl. Phys. 32 (1993) L699.
6. S. Sadamitsu, S. Umeno, Y. Koike, M. Hourai, S. Sumita and T. Shigemitsu: Jpn. J. Appl. Phys. 32 (1993) 3675.
7. M. Miyazaki, S. Miyazaki, Y. Yanase, T. Ochiai and T. Shigemitsu: Jpn. J. Appl. Phys. 34 (1995) 6303.
8. M. Itsumi, M. Tomita and M. Yamawaki: J. Appl. Phys. 78 (1995) 1940.
9. M. Itsumi, H. Akiya, T. Ueki, M. Tomita and M. Yamawaki: J. Appl. Phys. 78 (1995) 5984.
10. M. Itsumi, H. Akiya, T. Ueki, M. Tomita and M. Yamawaki: Jpn. J. Appl. Phys. 35 (1996) 812.
11. K. V. Ravi: J. Electrochem. Soc. 121 (1974) 1090.
12. F. A. Ponce, T. Yamashita and S. Hahn: Appl. Phys. Lett. 43 (1983) 1051.