Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13247-13254

  Binetti, S ^a   Somaschini, R ^a   Le Donne, A ^a   Leoni, E ^a   Pizzini, S ^a   Li, D ^a,b   Yang, D ^b  

^a INFM   (Italy)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); DISSOLUTION; DOPING (ADDITIVES); LUMINESCENCE; MOLTEN MATERIALS; NITROGEN; PLASTIC DEFORMATION; PRECIPITATION (CHEMICAL); SILICON NITRIDE;

FLOAT ZONE SILICON; MOLTEN SILICON CHARGE;

SILICON;

EID: 0037122139     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/375     Document Type: Article

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