Current-voltage characteristics of an integrated Schottky diode

Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 753-757

  Tarplee, M ^a   Madangarli, V ^a   Sudarshan, T S ^a  

^a University of South Carolina   (United States)

Author keywords

Current spreading; Leakage current; Schottky diodes; SiC devices

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRODES; LEAKAGE CURRENTS; SILICON CARBIDE;

REVERSE BREAKDOWN VOLTAGE;

SCHOTTKY BARRIER DIODES;

EID: 0036568234     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00189-7     Document Type: Article

References (8)

1. High voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination
2. Spreading resistance between constant potential surfaces
3. Ohmic contacts for GaAs devices
4. Design rules for field plate edge termination in SiC Schottky diodes