Temperature dependence of electrical properties of 6H-SiC buried gate JFET

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1504-1507

  Raynaud, C ^a   Richier, C ^a   Guillot, G ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

6H SiC; JFET; Mobility; Temperature dependance

Indexed keywords

EID: 0041727058     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00113-1     Document Type: Article

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