Surface preparation, growth and characterization of ultrathin gate oxides for scaled CMOS applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3212, Issue , 1997, Pages 42-51

  Wilk, Glen ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B DIFFUSIONS; BAND GAPS; BORON PENETRATIONS; CMOS SCALING; DEPLETION EFFECTS; DEVICE OPERATIONS; DIELECTRIC CONSTANTS; DIRECT TUNNELING CURRENTS; ELECTRICAL BEHAVIORS; ELECTRICAL PROPERTIES; ELECTRICAL THICKNESSES; ELECTRON EFFECTIVE MASSES; FUNDAMENTAL PARAMETERS; GATE DIELECTRIC MATERIALS; GATE OXIDE THICKNESSES; GATE OXIDES; INTERFACE QUALITIES; INTERFACE ROUGHNESSES; OXIDE THICKNESSES; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; PINHOLE FORMATIONS; PREPARATION TECHNIQUES; REPRODUCIBILITY; SACRIFICIAL OXIDES; SURFACE PREPARATIONS; TERMINATED SURFACES; TUNNELING CURRENTS; ULTRATHIN OXIDES;

BORON; BORON COMPOUNDS; DESORPTION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON TUNNELING; GATE DIELECTRICS; GATES (TRANSISTOR); GROWTH (MATERIALS); MOS DEVICES; OXIDES; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SURFACES; THERMAL DESORPTION; ULTRATHIN FILMS; UNCERTAINTY ANALYSIS;

SURFACE CHEMISTRY;

EID: 0345909576     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284618     Document Type: Conference Paper

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