A comparative study of the oxide breakdown in short-channel nMOSFETS and pMOSFETS stressed in inversion and in accumulation regimes

IEEE Transactions on Device and Materials Reliability

Volumn 3, Issue 1, 2003, Pages 8-13

  Crupi, Felice ^a   Kaczer, Ben ^b   Degraeve, Robin ^b   De Keersgieter, An ^b   Groeseneken, Guido ^b,c  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

CMOS reliability; Oxide breakdown; Short channel MOSFET

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; MOSFET DEVICES; SEMICONDUCTOR DOPING;

CMOS RELIABILITY; OXIDE BREAKDOWN; SHORT CHANNEL MOSFET;

CMOS INTEGRATED CIRCUITS;

EID: 0345225496     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2003.809447     Document Type: Article

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