Sub-0.1 μm MOSFET fabrication using 248 nm lithography by resist trimming technique in high density plasmas

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Volumn 1, Issue , 2001, Pages 460-463

  Sin, Chian Yuh ^a   Loong, Loh Wei ^b   Chen, Bing Hung ^a   Yujie, ^b   Yelehanka, Pradeep ^b   Chan, Lap ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84966460703     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.981517     Document Type: Conference Paper

References (4)

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2. Dan Baker, Tammy Zheng, Cliff Takemoto, Satyendra Sethi, Calvin Gabriel, Greg Scott, Proc. of SPIE, Vol. 3999(2000) p. 294.
3. R. Burmester, J. Winnerl, F. Neppl, Microelectronic Engineering, 13 (1991) p. 473-476.
4. Wie W. Lee et al., Symposium on VLSI Technology Digest of Technical Papers, p. 131 (1997).