Lithography at a wavelength of 193 nm

IBM Journal of Research and Development

Volumn 41, Issue 1-2, 1997, Pages 49-54

  Rothschild, M ^a   Forte, A R ^a   Kunz, R R ^a   Palmateer, S C ^a   Sedlacek, J H C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; FLUORINE COMPOUNDS; MICROELECTRONIC PROCESSING; OPTICAL MATERIALS; PROJECTION SYSTEMS;

ARGON FLUORIDE EXCIMER LASERS; PHOTORESIST CHEMISTRY;

PHOTOLITHOGRAPHY;

EID: 0030654567     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.411.0049     Document Type: Article

References (21)

1. For earlier reviews, see (a) M. Rothschild, R. B. Goodman, M. A. Hartney, M. W. Horn, R. R. Kunz, J. H. C. Sedlacek, and D. C. Shaver, "Photolithography at 193 nm," J. Vac. Sci. Technol. B 10, 2989 (1992); (b) M. Hibbs, R. R. Kunz, and M. Rothschild, "193-nm Lithography at MIT Lincoln Lab," Solid State Technol. 38, No. 7, 69 (1995).
2. For earlier reviews, see (a) M. Rothschild, R. B. Goodman, M. A. Hartney, M. W. Horn, R. R. Kunz, J. H. C. Sedlacek, and D. C. Shaver, "Photolithography at 193 nm," J. Vac. Sci. Technol. B 10, 2989 (1992); (b) M. Hibbs, R. R. Kunz, and M. Rothschild, "193-nm Lithography at MIT Lincoln Lab," Solid State Technol. 38, No. 7, 69 (1995).
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