Formation and characterization of self-assembled monolayers of octadecyltrimethoxysilane on chromium: Application in low-energy electron lithography

Langmuir

Volumn 14, Issue 2, 1998, Pages 342-346

  Hild, R ^a   David, C ^b   Muller H U ^a   Volkel B ^a   Kayser, D R ^a   Grunze, M ^a  

^a UNIVERSITY OF HEIDELBERG   (Germany)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHROMIUM COMPOUNDS; CONTACT ANGLE; ELECTRON BEAM LITHOGRAPHY; HYDRATION; IRON COMPOUNDS; MONOLAYERS; REACTIVE ION ETCHING; SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHROMIUM OXIDE; LOW ENERGY ELECTRON LITHOGRAPHY; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE (NEXAFS); OCTADECYLTRIMETHOXYSILANE; SELF ASSEMBLED MONOLAYERS (SAM);

SILANES;

EID: 0031647866     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la970438l     Document Type: Article

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