SiGe quantum wells on (110) Si grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 1050-1054

  Brunner, J ^a   Gail, M ^a   Abstreiter, G ^a   Vogl, P ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EXCITONIC LUMINESCENCE; HETEROSTRUCTURE BAND GAP; LUMINESCENCE INTENSITY; OPTICAL QUALITY; SILICON GERMANIDE QUANTUM WELLS;

SEMICONDUCTOR GROWTH;

EID: 0029308463     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)80099-X     Document Type: Article

References (9)

1. Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy