Precision crystal corner cube arrays for optical gratings formed by (100) silicon planes with selective epitaxial growth

Applied Optics

Volumn 35, Issue 19, 1996, Pages 3466-3470

  Neudeck, Gerold W ^a   Spitz, Jan ^a   Chang, Julie C H ^a   Denton, John P ^a   Gallagher, Neal ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005025342     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.35.003466     Document Type: Article

References (8)

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2. R. Bashir, S. Venkatesan, G. W. Neudeck, and J. P. Denton, ‘A poly-silicon contacted sub-collector BJT for a 3-dimensional BiCMOS process,’ IEEE Trans. Electron Devices Lett. 13, 392-395 (1992).
3. A. E. Kabir and G. W. Neudeck, ‘Single crystal silicon cantilever beams and microstructures formed by epitaxial lateral overgrowth,’ presented at the Electrochemical Society Spring Meeting, Symposium on Microstructures and Micromachining, San Francisco, Calif., 22-27 May 1994.
4. M. R. Goulding, ‘The selective epitaxial growth of silicon,’ Mater. Sci. Eng. B 17, 47-67 (1993).
5. R. Bashir, G. W. Neudeck, H. Yen, E. P. Kvam, and J. P. Denton, ‘Characterization of sidewall defects in selective epitaxial growth (SEG) of silicon,’ J. Vac. Sci. Technol. B 13, 923-927 (1995).
6. Y. Backlund and L. Rosengren, ‘New shapes in (100) Si using KOH and EDP etches,’ J. Micromech. Microeng. 2, 75-79 (l992).
7. S. S. Gerhart, C. C. Ling, and G. M. Rebeiz, ‘Integrated 119 pm linear corner-cube array,’ IEEE Microwave Guided Wave Lett. 1, 155-157 (1991).
8. S. W. E. James, W. H. Steel, and N. O. J. L. Evans, ‘Design and testing of a cube-corner array for laser ranging,’ in Optical Fabrication and Testing, D. R. Campbell, C. W. Johnson, and M. Lorenzen, eds., Proc. SPIE 1400, 129-136 (1990).