Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs

Microelectronics Reliability

Volumn 38, Issue 1, 1998, Pages 163-170

  Sheu, S ^a   Liou, J J ^a   Huang, C I ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ABNORMAL BASE CURRENTS; SOFTWARE PACKAGE MEDICI;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031636590     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00071-1     Document Type: Article

References (8)

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3. Liou, J. J. and Huang, C. I. Base and collector currents of pre- and post-burn-in AlGaAs/GaAs hetero- junction bipolar transistors. Solid-State Electron., 1994, 37, 1349.
4. Sugahara, H., Nagano, J., Nittono, T. and Ogawa, K., Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base. Digest IEEE GaAs IC Symp., 1993, p. 115.
5. Henderson, T., Hill, D., Liu, W., Costa, D., Chau, H. F., Kim, T. S. and Khatibzadeh, A., Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors. Digest IEEE IEDM, 1994.
6. MEDICI Manual. Technology Modeling Associates, Palo Alto, CA, 1993.
7. Liou, J. J., Advanced Semiconductor Device Physics and Modeling. Artech House, Boston, 1994.
8. Hurkx, G. A. M., Klaassen, D. B. M. and Knuvers, M. P. G. A new recombination model for device simulation including tunneling. IEEE Trans. Electron Dev., 1992, 39, 331.