-
1
-
-
0019918412
-
Heterostructure bipolar transistors and integrated circuits
-
Kroemer, H. Heterostructure bipolar transistors and integrated circuits. Proc. IEEE, 1982, 70, 13-25.
-
(1982)
Proc. IEEE
, vol.70
, pp. 13-25
-
-
Kroemer, H.1
-
2
-
-
0026882348
-
Performance capabilities of HBT devices and circuits for satellite communication
-
Fricke, K., Gatti, G., Hartnagel, H. L., Krozer, V. and Wurfl, J. Performance capabilities of HBT devices and circuits for satellite communication. IEEE Trans. Microwave Theory Tech., 1992, 40, 1205-1214.
-
(1992)
IEEE Trans. Microwave Theory Tech.
, vol.40
, pp. 1205-1214
-
-
Fricke, K.1
Gatti, G.2
Hartnagel, H.L.3
Krozer, V.4
Wurfl, J.5
-
3
-
-
0029490928
-
High power AlGaAs/GaAs HBTs and their application to mobile communication systems
-
Yoshimasu, T., High power AlGaAs/GaAs HBTs and their application to mobile communication systems. IEEE Int. Electron Devices Meeting, Technical Digest, 1995, pp. 787-790.
-
(1995)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 787-790
-
-
Yoshimasu, T.1
-
4
-
-
0029521776
-
InGaP/GaAs power HBTs with a low bias voltage
-
Ohara, S., Yamada, H., Iwai, T., Yamaguchi, Y., Imanishi, K. and Joshin, K., InGaP/GaAs power HBTs with a low bias voltage. IEEE Int. Electron Devices Meeting, Technical Digest, 1995, pp. 791-794.
-
(1995)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 791-794
-
-
Ohara, S.1
Yamada, H.2
Iwai, T.3
Yamaguchi, Y.4
Imanishi, K.5
Joshin, K.6
-
5
-
-
0029250794
-
max new self-alignment InP/InGaAs HBTs with a highly Be doped base layer grown by ALE/MOCVD
-
max new self-alignment InP/InGaAs HBTs with a highly Be doped base layer grown by ALE/MOCVD. IEEE Electron Dev. Lett., 1995, 16, 55-57.
-
(1995)
IEEE Electron Dev. Lett.
, vol.16
, pp. 55-57
-
-
Shigematsu, H.1
Iwai, T.2
Matsumiya, Y.3
Ohnishi, H.4
Ueda, O.5
Fujii, T.6
-
6
-
-
0029512455
-
AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications
-
Nguyen, C., Liu, T., Chen, M., Sun, H.-C. and Rensch, D., AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications. IEEE Int. Electron Devices Meeting, Technical Digest, 1995, pp. 799-802.
-
(1995)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 799-802
-
-
Nguyen, C.1
Liu, T.2
Chen, M.3
Sun, H.-C.4
Rensch, D.5
-
7
-
-
0026221592
-
High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts
-
Streit, D. C., Oki, A. K., Umemoto, D. K., Velebir, J. R., Stolt, K. S., Yamada, F. M., Saito, Y., Hafizi, M. E., Bui, S. and Tran, L. T. High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts. IEEE Electron Dev. Lett., 1991, 12, 471-473.
-
(1991)
IEEE Electron Dev. Lett.
, vol.12
, pp. 471-473
-
-
Streit, D.C.1
Oki, A.K.2
Umemoto, D.K.3
Velebir, J.R.4
Stolt, K.S.5
Yamada, F.M.6
Saito, Y.7
Hafizi, M.E.8
Bui, S.9
Tran, L.T.10
-
8
-
-
0027095191
-
Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base
-
Yamada, F. M., Oki, A. K., Streit, D. C., Saito, Y., Umemoto, D. K., Tran, L. T., Bui, S., Velebir, J. R. and McIver, G. W., Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base. IEEE Microwave Theory and Techniques Symposium Digest, 1992, pp. 739-742.
-
IEEE Microwave Theory and Techniques Symposium Digest
, vol.1992
, pp. 739-742
-
-
Yamada, F.M.1
Oki, A.K.2
Streit, D.C.3
Saito, Y.4
Umemoto, D.K.5
Tran, L.T.6
Bui, S.7
Velebir, J.R.8
McIver, G.W.9
-
9
-
-
0029533252
-
Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures
-
Henderson, T. S. and Ikalainen, P.K., Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures. IEEE GaAs IC Symposium, Technical Digest, 1995, pp. 151-154.
-
(1995)
IEEE GaAs IC Symposium, Technical Digest
, pp. 151-154
-
-
Henderson, T.S.1
Ikalainen, P.K.2
-
10
-
-
0027625334
-
Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP
-
Tanaka, S., Shimawaki, H., Kasahara, K. and Honjo, K. Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP. IEEE Trans. Electron Dev., 1993, 40, 1194-1201.
-
(1993)
IEEE Trans. Electron Dev.
, vol.40
, pp. 1194-1201
-
-
Tanaka, S.1
Shimawaki, H.2
Kasahara, K.3
Honjo, K.4
-
11
-
-
0004837212
-
Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors
-
Sheu, S., Liou, J. J., Huang, C. I. and Williamson, D. C. Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors. J. Appl. Phys., 1996, 79, 7348-7352.
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 7348-7352
-
-
Sheu, S.1
Liou, J.J.2
Huang, C.I.3
Williamson, D.C.4
-
12
-
-
0029493301
-
Model for degradation of GaAs/AlGaAs HBTs under temperature and current stress
-
Henderson, T., Model for degradation of GaAs/AlGaAs HBTs under temperature and current stress. IEEE Int. Electron Devices Meeting, Technical Digest, 1995, pp. 811-814.
-
(1995)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 811-814
-
-
Henderson, T.1
-
13
-
-
0030085460
-
Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors
-
Liu, W. Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors. IEEE Trans. Electron Dev., 1996, 43, 220-227.
-
(1996)
IEEE Trans. Electron Dev.
, vol.43
, pp. 220-227
-
-
Liu, W.1
-
14
-
-
0030110406
-
Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors
-
Liu, W., Chan, H.-F. and Beam, E. III Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors. IEEE Trans. Electron Dev., 1996, 43, 388-395.
-
(1996)
IEEE Trans. Electron Dev.
, vol.43
, pp. 388-395
-
-
Liu, W.1
Chan, H.-F.2
Beam E. III3
-
15
-
-
0028737093
-
High-reliability InGaP/GaAs HBTs fabricated by self-aligned process
-
Takahashi, T., Sasa, S., Kawano, A., Iwai, T. and Fujii, T., High-reliability InGaP/GaAs HBTs fabricated by self-aligned process. IEEE Int. Electron Devices Meeting, Technical Digest, 1994, pp. 191-194.
-
(1994)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 191-194
-
-
Takahashi, T.1
Sasa, S.2
Kawano, A.3
Iwai, T.4
Fujii, T.5
-
16
-
-
0029545394
-
Reliability investigation of InGaP/GaAs heterojunction bipolar transistors
-
Bahl, S. R., Camnitz, L. H., Houng, D., Mierzwinski, M., Turner, J. and Lefforge, D., Reliability investigation of InGaP/GaAs heterojunction bipolar transistors. IEEE Int. Electron Devices Meeting, Technical Digest, 1995, pp. 815-818.
-
(1995)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 815-818
-
-
Bahl, S.R.1
Camnitz, L.H.2
Houng, D.3
Mierzwinski, M.4
Turner, J.5
Lefforge, D.6
-
17
-
-
0006420636
-
Improved heterojunction bipolar transistor reliability with carbon-doped base
-
Wang, G.-W. Improved heterojunction bipolar transistor reliability with carbon-doped base. Appl. Phys. Lett., 1996, 68, 809-811.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 809-811
-
-
Wang, G.-W.1
-
18
-
-
0040201163
-
Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
-
Tiwari, S., Frank, D. J. and Wright, S. L. Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors. J. Appl. Phys., 1988, 64, 5009-5012.
-
(1988)
J. Appl. Phys.
, vol.64
, pp. 5009-5012
-
-
Tiwari, S.1
Frank, D.J.2
Wright, S.L.3
-
19
-
-
0040312279
-
Base and collector leakage currents of AlGaAs/GaAs heterojunction bipolar transistors
-
Liou, J. J., Huang, C. I., Bayraktaroglu, B., Williamson, D. C. and Parab, K. B. Base and collector leakage currents of AlGaAs/GaAs heterojunction bipolar transistors. J. Appl. Phys., 1994, 76, 3187-3193.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 3187-3193
-
-
Liou, J.J.1
Huang, C.I.2
Bayraktaroglu, B.3
Williamson, D.C.4
Parab, K.B.5
-
20
-
-
0026896020
-
Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors
-
Liu, W. and Harris, J. S. Jr. Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors. Solid-State Electron., 1992, 35, 891-895.
-
(1992)
Solid-State Electron.
, vol.35
, pp. 891-895
-
-
Liu, W.1
Harris J.S., Jr.2
-
21
-
-
21544471313
-
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
-
Sandroff, C. J., Nottenburg, R. N., Bischoff, J.-C. and Bhat, R. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation. Appl. Phys. Lett., 1987, 51, 33-35.
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 33-35
-
-
Sandroff, C.J.1
Nottenburg, R.N.2
Bischoff, J.-C.3
Bhat, R.4
-
22
-
-
0041690120
-
3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors
-
3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors. Appl. Phys. Lett., 1990, 57, 2113-2115.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 2113-2115
-
-
Chuang, H.L.1
Carpenter, M.S.2
Melloch, M.R.3
Lundstrom, M.S.4
Yablonovitch, E.5
Gmitter, T.J.6
-
23
-
-
0026817616
-
Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors
-
Wang, Q., Yang, E. S., Li, P.-W., Lu, Z., Osgood, R. M. Jr. and Wang, W. I. Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors. IEEE Electron Dev. Lett., 1992, 13, 83-85.
-
(1992)
IEEE Electron Dev. Lett.
, vol.13
, pp. 83-85
-
-
Wang, Q.1
Yang, E.S.2
Li, P.-W.3
Lu, Z.4
Osgood R.M., Jr.5
Wang, W.I.6
-
24
-
-
0022783948
-
Location of 1/f noise sources in BJTs and HBJTs - I. Theory
-
van der Ziel, A., Zhang, X. and Pawlikiewicz, A. H. Location of 1/f noise sources in BJTs and HBJTs - I. Theory. IEEE Trans. Electron Dev., 1986, 33, 1371-1376.
-
(1986)
IEEE Trans. Electron Dev.
, vol.33
, pp. 1371-1376
-
-
Van Der Ziel, A.1
Zhang, X.2
Pawlikiewicz, A.H.3
-
25
-
-
0023421533
-
Location of 1/f noise sources in BJTs and HBJTs - II. Experiment
-
Pawlikiewicz, A. H. and van der Ziel, A. Location of 1/f noise sources in BJTs and HBJTs - II. Experiment. IEEE Trans. Electron Dev., 1987, 34, 2009-2012.
-
(1987)
IEEE Trans. Electron Dev.
, vol.34
, pp. 2009-2012
-
-
Pawlikiewicz, A.H.1
Van Der Ziel, A.2
-
26
-
-
0001133507
-
An assessment of noise sources and characteristics of AlGaAs/GaAs heterojunction bipolar transistors
-
Tutt, M. N., Pavlidis, D. and Bayraktaroglu, B. An assessment of noise sources and characteristics of AlGaAs/GaAs heterojunction bipolar transistors. Inst. Physics Conf. Series, 1989, 106, 701-706.
-
(1989)
Inst. Physics Conf. Series
, vol.106
, pp. 701-706
-
-
Tutt, M.N.1
Pavlidis, D.2
Bayraktaroglu, B.3
-
27
-
-
0342522108
-
Low frequency noise measurements in GaAlAs/GaAs heterojunction bipolar transistors
-
Pascal, F., Jarrix, S., Delseny, C., Lecoy, G., Dubon-Chevallier, C., Dangla, J. and Wang, H., Low frequency noise measurements in GaAlAs/GaAs heterojunction bipolar transistors. Proc. Int. Conf. on Noise in Physical Systems and 1/f Fluctuations, 1993, pp. 296-299.
-
(1993)
Proc. Int. Conf. on Noise in Physical Systems and 1/f Fluctuations
, pp. 296-299
-
-
Pascal, F.1
Jarrix, S.2
Delseny, C.3
Lecoy, G.4
Dubon-Chevallier, C.5
Dangla, J.6
Wang, H.7
-
28
-
-
0027608465
-
1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors: Impact of intrinsic transistor and parasitic series resistances
-
Kleinpenning, T. G. M. and Holden, A. J. 1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors: impact of intrinsic transistor and parasitic series resistances. IEEE Trans. Electron Dev., 1993, 40, 1148-1153.
-
(1993)
IEEE Trans. Electron Dev.
, vol.40
, pp. 1148-1153
-
-
Kleinpenning, T.G.M.1
Holden, A.J.2
-
30
-
-
0028483408
-
Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors
-
Costa, D., Tutt, M. N., Khatibzadeh, A. and Pavlidis, D. Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors. IEEE Trans. Electron Dev., 1994, 41, 1347-1350.
-
(1994)
IEEE Trans. Electron Dev.
, vol.41
, pp. 1347-1350
-
-
Costa, D.1
Tutt, M.N.2
Khatibzadeh, A.3
Pavlidis, D.4
-
31
-
-
0025469486
-
Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors
-
Tanaka, S., Hayama, H., Furukawa, A., Baba, T., Mizuta, M. and Honjo, K. Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors. Electron. Lett., 1990, 26, 1439-1441.
-
(1990)
Electron. Lett.
, vol.26
, pp. 1439-1441
-
-
Tanaka, S.1
Hayama, H.2
Furukawa, A.3
Baba, T.4
Mizuta, M.5
Honjo, K.6
-
32
-
-
0029250126
-
Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors
-
Tutt, M. N., Pavlidis, D., Khatibzadeh, A. and Bayraktaroglu, B. Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors. IEEE Trans. Electron Dev., 1995, 42, 219-230.
-
(1995)
IEEE Trans. Electron Dev.
, vol.42
, pp. 219-230
-
-
Tutt, M.N.1
Pavlidis, D.2
Khatibzadeh, A.3
Bayraktaroglu, B.4
-
33
-
-
0030150069
-
Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V hetero-junction bipolar transistors
-
Kirtania, A. K., Das, M. B., Chandrasekhar, S., Lunardi, L. M., Qua, G. J., Hamm, R. A. and Yang, L.-W. Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V hetero-junction bipolar transistors. IEEE Trans. Electron Dev., 1996, 43, 784-792.
-
(1996)
IEEE Trans. Electron Dev.
, vol.43
, pp. 784-792
-
-
Kirtania, A.K.1
Das, M.B.2
Chandrasekhar, S.3
Lunardi, L.M.4
Qua, G.J.5
Hamm, R.A.6
Yang, L.-W.7
-
34
-
-
0029771682
-
Low-frequency noise characteristics of UHV/CVD epitaxial Si- And SiGe-base bipolar transistors
-
Cressler, J. D., Vempati, L., Babcock, J. A., Jaeger, R. C. and Harame, D. L. Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors. IEEE Electron Dev. Lett., 1996, 17, 13-15.
-
(1996)
IEEE Electron Dev. Lett.
, vol.17
, pp. 13-15
-
-
Cressler, J.D.1
Vempati, L.2
Babcock, J.A.3
Jaeger, R.C.4
Harame, D.L.5
-
35
-
-
0029546463
-
Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors
-
Babcock, J. A., Cressler, J. D., Vempati, L. S., Joseph, A. J. and Harame, D. L., Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors. IEEE Int. Electron Devices Meeting, Technical Digest, 1995, pp. 357-360.
-
(1995)
IEEE Int. Electron Devices Meeting, Technical Digest
, pp. 357-360
-
-
Babcock, J.A.1
Cressler, J.D.2
Vempati, L.S.3
Joseph, A.J.4
Harame, D.L.5
-
36
-
-
0029306017
-
Noise modeling of microwave heterojunction bipolar transistors
-
Escotte, L., Roux, J.-P., Plana, R., Graffeuil, J. and Gruhle, A. Noise modeling of microwave heterojunction bipolar transistors. IEEE Trans. Electron Dev., 1995, 42, 883-889.
-
(1995)
IEEE Trans. Electron Dev.
, vol.42
, pp. 883-889
-
-
Escotte, L.1
Roux, J.-P.2
Plana, R.3
Graffeuil, J.4
Gruhle, A.5
-
37
-
-
0029751449
-
Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBTs
-
Liou, J. J., Jenkins, T. J., Liou, L. L., Neidhard, R., Barlage, D. W., Fitch, R., Barette, J. P., Mack, M., Bozada, C. A., Lee, R. H. Y., Dettmer, R. W. and Sewell, J. S. Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBTs. IEEE Trans. Electron Dev., 1996, 43, 116-122.
-
(1996)
IEEE Trans. Electron Dev.
, vol.43
, pp. 116-122
-
-
Liou, J.J.1
Jenkins, T.J.2
Liou, L.L.3
Neidhard, R.4
Barlage, D.W.5
Fitch, R.6
Barette, J.P.7
Mack, M.8
Bozada, C.A.9
Lee, R.H.Y.10
Dettmer, R.W.11
Sewell, J.S.12
-
38
-
-
0029545255
-
Thermal management to avoid the collapse of current gain in power heterojunction bipolar transistors
-
Liu, W., Thermal management to avoid the collapse of current gain in power heterojunction bipolar transistors. IEEE GaAs IC Symposium, Technical Digest, 1995, pp. 147-150.
-
(1995)
IEEE GaAs IC Symposium, Technical Digest
, pp. 147-150
-
-
Liu, W.1
-
39
-
-
0030080708
-
The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction transistors
-
Liu, W., Khatibzadeh, A., Sweder, J. and Chau, H.-F. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction transistors. IEEE Trans. Electron Dev., 1996, 43, 245-251.
-
(1996)
IEEE Trans. Electron Dev.
, vol.43
, pp. 245-251
-
-
Liu, W.1
Khatibzadeh, A.2
Sweder, J.3
Chau, H.-F.4
-
40
-
-
0029406145
-
Flexible, thin-film, GaAs heterojunction bipolar transistors mounted on natural diamond substrates
-
Arbet-Engels, V., Chang, W., Yablonovich, E., Sullivan, G. J., Swed, M. K. and Chang, M. F. Flexible, thin-film, GaAs heterojunction bipolar transistors mounted on natural diamond substrates. Solid-State Electron., 1995, 38, 1972-1974.
-
(1995)
Solid-State Electron.
, vol.38
, pp. 1972-1974
-
-
Arbet-Engels, V.1
Chang, W.2
Yablonovich, E.3
Sullivan, G.J.4
Swed, M.K.5
Chang, M.F.6
-
41
-
-
0025508937
-
The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling
-
Hafizi, M. E., Crowell, C. R. and Grupen, M. E. The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling. IEEE Trans. Electron Dev., 1990, 37, 2121-2129.
-
(1990)
IEEE Trans. Electron Dev.
, vol.37
, pp. 2121-2129
-
-
Hafizi, M.E.1
Crowell, C.R.2
Grupen, M.E.3
-
42
-
-
0026852685
-
Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation
-
Liou, L. L., Huang, C. I. and Ebel, J. Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation. Solid-State Electron., 1992, 35, 579-585.
-
(1992)
Solid-State Electron.
, vol.35
, pp. 579-585
-
-
Liou, L.L.1
Huang, C.I.2
Ebel, J.3
-
43
-
-
0027187368
-
Thermal effects on the characteristics of AlGaAs/GaAs hetero-junction bipolar transistors using two-dimensional numerical simulation
-
Liou, L. L., Ebel, J. L. and Huang, C. I. Thermal effects on the characteristics of AlGaAs/GaAs hetero-junction bipolar transistors using two-dimensional numerical simulation. IEEE Trans. Electron Dev., 1993, 40, 35-43.
-
(1993)
IEEE Trans. Electron Dev.
, vol.40
, pp. 35-43
-
-
Liou, L.L.1
Ebel, J.L.2
Huang, C.I.3
-
44
-
-
0027810962
-
The influence of lattice heating on semiconductor device characteristics
-
Apanovich, Y., Cottle, R., Freydin, B., Lyumkis, E., Polsky, B., Tchernaiev, A. and Blakey, P. The influence of lattice heating on semiconductor device characteristics. Int. J. Comput. Math. Elect. Electron. Eng., 1993, 12, 531-539.
-
(1993)
Int. J. Comput. Math. Elect. Electron. Eng.
, vol.12
, pp. 531-539
-
-
Apanovich, Y.1
Cottle, R.2
Freydin, B.3
Lyumkis, E.4
Polsky, B.5
Tchernaiev, A.6
Blakey, P.7
-
45
-
-
0025512595
-
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor modeling
-
Wachutka, G. K. Rigorous thermodynamic treatment of heat generation and conduction in semiconductor modeling. IEEE Trans. Computer Aided Design, 1990, 9, 1141-1149.
-
(1990)
IEEE Trans. Computer Aided Design
, vol.9
, pp. 1141-1149
-
-
Wachutka, G.K.1
-
46
-
-
0029521286
-
Physical modeling of surface and heterojunction for mesa-structured HBTs
-
Kan, E. C. and Dutton, R. W., Physical modeling of surface and heterojunction for mesa-structured HBTs. IEEE GaAs IC Symposium, Technical Digest, 1995, pp. 171-174.
-
(1995)
IEEE GaAs IC Symposium, Technical Digest
, pp. 171-174
-
-
Kan, E.C.1
Dutton, R.W.2
-
47
-
-
0027657452
-
A physics-based, analytical hetero-junction bipolar transistor model including thermal and high current effects
-
Liou, J. J., Liou, L. L., Huang, C. I. and Bayraktaroglu, B. A physics-based, analytical hetero-junction bipolar transistor model including thermal and high current effects. IEEE Trans. Electron Dev., 1993, 40, 1570-1577.
-
(1993)
IEEE Trans. Electron Dev.
, vol.40
, pp. 1570-1577
-
-
Liou, J.J.1
Liou, L.L.2
Huang, C.I.3
Bayraktaroglu, B.4
|