High-speed InGaP/GaAs HBT's with a strained InxGa1-xAs base

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 226-228

  Ahmari, D A ^a,b   Fresina, M T ^a,b   Hartmann, Q J ^a,b   Barlage, D W ^a,b   Mares, P J ^a,b   Feng, M ^a,b   Stillman, G E ^a,b  

^a IEEE

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

CUTOFF FREQUENCY; DC CURRENT GAIN; GRADED BASE; SELF ALIGNED BASE CONTACTS; SELF ALIGNED COLLECTOR ETCH;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030150861     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491837     Document Type: Article

References (17)

1. G. L. Patton, D. L. Harame, J. M. C. Stork, B. S. Meyerson, G. J. Scilla, and E. Ganin, "Graded-SiGe-base, poly-emitter heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 10, p. 534, 1989.
2. W. Liu, D. Costa, and J. S. Harris, "Current gain of graded Al-GaAs/GaAs heterojunction bipolar transistors with and without a base quasielectric field," IEEE Trans. Electron Devices, vol. 39, p. 2422, 1992.
3. P. M. Enquist, L. R. Ramberg, F. E. Najjar, W. J. Scaff, and L. F. Eastman, "Heterojunction bipolar transistor using pseudomorphic GaInAs for the base," Appl. Phys. Lett., vol. 49, p. 179, 1986.
4. M. Ilegens, Optoelectronic Integration: Physics, Technology, and Applications, O. Wada, Ed. Boston: Kluwer, 1994.
5. T. Nittono, N. Watanabe, H. Ito, H. Sugahara, K. Nagata, and O. Nakajima, "Carbon and Indium codoping in GaAs for reliable AlGaAs/GaAs heterojunction bipolar transistors," Jpn. J. Appl. Phys., vol. 33, p. 6129, 1994.
6. M. T. Fresina, D. A. Ahmari, P. J. Mates, Q. J. Hartmann, M. Feng, and G. E. Stillman, "High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 16, no. 12, Dec. 1995.
7. W. J. Ho, M. F. Chang, A. Sailer, P. Zampardi, D. Deakin, B. McDermott, R. Pierson, J. A. Higgins, and J. Waldrop. "GaInP/GaAs HBT's for high-speed integrated circuit application," IEEE Electron Device Lett., vol. 14, no. 12, p. 572, 1993.
8. R. Plana, J. Graffeuil, S. L. Delag, H. Blanck, M. A. di Forte-Poisson, C. Brylinski, and E. Chartier, "Low frequency noise in self-aligned GaInP/GaAs heterojunction bipolar transistors," Electron Lett., vol. 28, p. 2354, 1992.
9. 1-xAs base," in Proc. 1995 ISCS, Cheju Island, Korea, 1995.
10. 1-xAs (0 < x ≤ 0.53) by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 60, pp. 2903-2905, 1992.
11. P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, "A new straight forward calibration and correction procedure for 'on wafer' high frequency s-parameter measurements (45 MHz-18 GHz)," IEEE BCTM Conf., 1987.
12. S. Yamahata, "Ultrahigh-Speed AlGaAs/GaAs ballistic collection transistors using carbon as a p-type dopant," Electron. Lett., vol. 29, no. 22, Oct. 1993.
13. P. M. Asbeck, "GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application," IEEE Trans. Electron Devices, vol. 36, no. 10, Oct. 1989.
14. T. Ishibashi, "Suppressed base-widening in AlGaAs/GaAs ballistic collection transistors," 48th Dev. Res. Conf., 1990, vol. VIIB-3.
15. D. J. Roulston, Bipolar Semiconductor Devices. New York: McGraw Hill, Inc., 1990, pp. 241-242.
16. P. J. Mares, D. W. Barlage, D. Scherrer, M. T. Fresina, D. A. Ahmari, Q. J. Hartmann, M. Feng, and G. E. Stillman, "A 50 GHz bias dependent HBT model," Submitted for publication in IEEE Electron Device Lett., 1995.
17. D.-W. Wu, D. L. Miller, M. Fukuda, and Y.-H. Yun, "Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters," 1993 IEEE Gallium Arsenide Integrated Circuit Symp., p. 259.