High speed InGaP/GaAs HBTs with fmax of 159 GHz

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1611-1614

  Oka, T ^a   Ouchi, K ^a   Mochizuki, K ^a   Nakamura, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

DELAY TIME COMPONENT ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031248454     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00113-5     Document Type: Article

References (22)

1. Kren, D. E., Rezazadeh, A. A. and Tothill, N., Electron, Lett., 1994, 30, 825.
2. Liu, W., Fan, S. K., Kim, T. S., Beam III, E. A. and Davito, D. B., IEEE Trans. Electron Dev., 1993, 40, 1378.
3. Kren, D. E., Rezazadeh, A. A., Rees, P. K. and Tothill, N., Electron. Lett., 1995, 29, 961.
4. Liu. W., Fan, S. K., Henderson, T. and Davito, D. B., IEEE Electron Device Lett., 1993, 14, 176.
5. Liu, W. and Fan, S. K, IEEE Electron Dev. Lett., 1992, 13, 510.
6. Abernathy, C. R., Ren, F., Wisk, P. W., Pearton, S. J. and Esagui, R., Appl. Phys. Lett., 1992, 61, 1092.
7. Kroemer, H., J. Vac. Sci. Technol. B, 1983, 1, 126.
8. Biswas, D., Debar, N., Bhattacharya, P., Razeghi, M., Defour, M. and Omnes, F., Appl. Phys. Lett., 1990, 56, 833.
9. Costa, D. and Harris, Jr., J., IEEE Trans. Electron Dev., 1992, 39, 2383.
10. Chen, J., Sites, J. R., Spain, I. L., Hafich, M. J. and Robinson, G. Y., Appl. Phys. Lett., 1991, 58, 744.
11. Lothian, J. R., Kuo, J. M., Ren. F. and Pearton, S. J., J. Electron. Mater., 1992, 21, 441.
12. Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F. and Kovalchik, J., Appl. Phys. Lett., 1989, 55, 1750.
13. Hanna, M. C., Lu, Z. H. and Majerfeld, A., Appl. Phys. Lett., 1991, 58, 164.
14. Houng, Y. M., Lester, S. D., Mars, D. E. and Miller, J. N., J. Vac. Sci. Technol. B, 1993, 11, 915.
15. Shirakashi, J. and Konagai, M., Solid-St. Electron., 1995, 38, 1675.
16. Hiraoka, Y. S. and Yoshida, J., IEEE Trans. Electron Dev., 1988, 35, 857.
17. Hayama, N. and Honjo, K., IEEE Electron Dev. Lett., 1990, 11, 388.
18. Hiraoka, Y. S., Yoshida, J. and Azuma, M., IEEE Trans. Electron Dev., 1987, 34, 721.
19. Ouchi, K., Mishima, T., Mochizuki, K., Oka, T. and Tanoue, T., Extended Abstracts of the 1996 Int. Conf. on Solid State Devices and Materials, to be published.
20. Costa, D., Liu, W. U. and Harris, Jr., J. S., IEEE Trans. Electron Dev., 1991, 38, 2018.
21. Hart, P. A. H., Bipolar and Bipolar-MOS Integration, Elsevier Science B. V., North-Holland, 1994, p. 157.
22. Mochizuki, K., Nakamura, T., Tanoue, T. and Masuda, H., Solid-St. Electron., 1995, 38, 1619.