High-Gain Quantum-Dot Semiconductor Optical Amplifier for 1300 nm

IEEE Journal of Quantum Electronics

Volumn 39, Issue 11, 2003, Pages 1409-1414

  Bakonyi, Zoltan ^a   Su, Hui ^b   Onishchukov, George ^a   Lester, Luke F ^b   Gray, Allen L ^c   Newell, Timothy C ^c   Tünnermann, Andreas ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c Zia Laser Incorporated   (United States)

Author keywords

Quantum dots (QDs); Quantum dot optical amplifiers; Semiconductor lasers; Semiconductor optical amplifiers (SOAs)

Indexed keywords

ALUMINUM COMPOUNDS; BANDWIDTH; COMPUTER SIMULATION; GROUND STATE; LASER PULSES; LIGHT AMPLIFIERS; OPTICAL PUMPING; OPTICAL WAVEGUIDES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

OUTPUT SATURATION POWER; PUMP CURRENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0242527315     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.818306     Document Type: Article

References (34)

1. R. J. Warburton, "Self-assembled semiconductor quantum dots," Contemporary Phys., vol. 43, no. 5, pp. 351-364, Sept.-Oct. 2002.
2. Y. Arakawa, "Progress in self-assembled quantum dots for optoelectronic device application," IEICE Trans. Electron., vol. E85C, no. 1, pp. 37-44, Jan. 2002.
3. X. D. Huang, A. Stintz, C. P. Hains, G. T. Liu, J. Cheng, and K. J. Malloy, "Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers," Electron. Lett., vol. 36, no. 1, pp. 41-42, Jan. 2000.
4. P. G. Eliseev, H. Li, G. T. Liu, A. Stintz, T. C. Newell, L. F. Lester, and K. J. Malloy, "Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 7, pp. 135-142, 2001.
5. D. Bimberg, M. Grundmann, N. N. Ledentsov, M. H. Mao, C. Ribbat, R. Sellin, V. M. Ustinov, A. E. Zhukov, Z. I. Alferov, and J. A. Lott, "Novel infrared quantum dot lasers: theory and reality," Phys. Stat. Solidi B, vol. 224, no. 3, pp. 787-796, Apr. 2001.
6. R. Krebs, F. Klopf, J. P. Reithmaier, and A. Forchel, "High performance 1.3 μm quantum-dot lasers," Jpn. J. Appl. Phys., pt. 1, vol. 41. no. 2B, pp. 1158-1161, Feb. 2002.
7. J. H. H. Sandmann, S. Grosse, G. Vonplessen, J. Feldmann, G. Hayes, R. Phillips, H. Lipsanen, M. Sopanen, and J. Ahopelto, "Ultrafast relaxation dynamics in strain-induced quantum dots," Phys. Stat. Solidi B, vol. 204, no. 1, pp. 251-254, Nov. 1997.
8. 0.6 As/GaAs quantum dots characterized by differential transmission spectroscopy," Phys. Rev. B, vol. 57, no. 16, pp. R9423-R9426, Apr. 1998.
9. I. Gontijo, G. S. Buller, J. S. Massa, A. C. Walker, S. V. Zaitsev, N. Y. Gordeev, V. M. Ustinov, and P. S. Kop'ev, "Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots," Jpn. J. Appl. Phys., pt. 1, vol. 38, no. 2A, pp. 674-680, Feb. 1999.
10. P. Borri, W. Langbein, J. M. Hvam, E. Heinrichsdorff, M. H. Mao, and D. Bimberg, "Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers," IEEE Photon. Technol. Lett., vol. 12, pp. 594-596, June 2000.
11. T. Akiyama, H. Kuwatsuka, T. Simoyama, Y. Nakata, K. Mukai, M. Sugawara, O. Wada, and H. Ishikawa, "Ultrafast nonlinear processes in quantum-dot optical amplifiers," Opt. Quantum Electron., vol. 33, no. 7-10, pp. 927-938, July 2001.
12. D. A. Yarotski, R. D. Averitt, N. Negre, S. A. Crooker, A. J. Taylor, G. P. Donati, A. Stintz, L. F. Lester, and K. J. Malloy, "Ultrafast carrier-relaxation dynamics in self-assembled InAsGaAs quantum dots," J. Opt. Soc. Amer. B, vol. 19, no. 6, pp. 1480-1484, June 2002.
13. K. Kim, J. Urayama, T. B. Norris, J. Singh, J. Phillips, and P. Bhattacharya, "Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots," Appl. Phys. Lett., vol. 81, no. 4, pp. 670-672, July 2002.
14. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Z. I. Alferov, P. S. Kopev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, no. 2, pp. 196-205, 1997.
15. T. C. Newell, D. J. Bessert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, pp. 1527-1529, Dec. 1999.
16. H. Saito, K. Nishi, A. Kamei, and S. Sugou, "Low chirp observed in directly modulated quantum dot lasers," IEEE Photon. Technol. Lett., vol. 12. pp. 1298-1300, Oct. 2000.
17. T. W. Berg and J. Mork, "Quantum dot amplifiers with high output power and low noise," Appl. Phys. Lett., vol. 82, no. 18, pp. 3083-3085, May 2003.
18. T. Akiyama, H. Kuwatsuka, T. Simoyama, Y. Nakata, K. Mukai, M. Sugawara, O. Wada, and H. Ishikawa, "Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device," IEEE Photon. Technol. Lett., vol. 12, pp. 1301-1303, Oct. 2000.
19. A. Patane, A. Polimeni, M. Henini, L. Eaves, P. C. Main, M. Al-Khafaji, and A. G. Cullis, "Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption," in Institute of Physics Conference Series, 1999, no. 162, pp. 451-455.
20. P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Low-threshold quantum dot lasers with 201 nm tuning range," Electron. Lett., vol. 36, no. 18, pp. 1544-1545, Aug. 2000.
21. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical characteristics of 1.24-μm InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, pp. 931-933, Aug. 1999.
22. 0.85 As quantum well," Electron. Lett., vol. 35, no. 14, pp. 1163-1165, July 1999.
23. S. Matsuda, H. Asahi, J. Mori, D. Watanabe, and K. Asami, "1.3-1.6-μm -wavelength quantum dots self-formed in GaAs/InAs short-period supertattices grown on InA(411)A substrates," Jpn. J. Appl. Phys., pt. 2, vol. 40, no. 6B, pp. L586-L588, 2001.
24. H. Saito, K. Nishi, and S. Sugou, "Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates," Appl. Phys. Lett., vol. 78, no. 3, pp. 267-269, Jan. 2001.
25. 0.85 As underlying layer," J. Cryst. Growth, vol. 240, no. 3-4, pp. 395-400, 2002.
26. 1-x As quantum dots grown along GaAs multiatomic steps by MOVPE," J. Cryst. Growth, vol. 237, pp. 1476-1480, Apr. 2002.
27. P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, "Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature," IEEE J. Select. Topics Quantum Electron., vol. 8, pp. 984-991, Sept.-Oct. 2002.
28. Y. Qiu, P. Gogna, S. Forouhar, A. Stintz, and L. F. Lester, "High-performance InAs quantum-dot lasers near 1.3 μm," Appl. Phys. Lett., vol. 79, no. 22, pp. 3570-3572, Nov. 2001.
29. A. Patane, A. Levin, A. Polimeni, L. Eaves, P. C. Main, M. Henini, and G. Hill, "Carrier thermalization within a disordered ensemble of self-assembled quantum dots," Phys. Rev. B, vol. 62, no. 16, pp. 11 084-11 088, Oct. 2000.
30. Z. X. Ma and K. Pierz, "Carrier thermalization and activation within self-assembled InAs/AlAs quantum dot states," Surface Science, vol. 511, no. 1-3, pp. 57-64, June 2002.
31. T. W. Berg, S. Bischoff, I. Magnusdottir, and J. Mork, "Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices," IEEE Photon. Technol. Lett., vol. 13, pp. 541-543, June 2001.
32. T. Akiyama, N. Hatori, Y. Nakata, H. Ebe, and M. Sugawara, "Pattern-effect-free semiconductor optical amplifier achieved using quantum dots," Electron. Lett., vol. 38, no. 19, pp. 1139-1140, Sept. 2002.
33. A. Vukovic, P. Sewell, T. M. Benson, and P. C. Kendall, "Advances in facet design for buried lasers and amplifiers," IEEE J. Select. Topics Quantum Electron., vol. 6, no. 1, pp. 175-184, Jan.-Feb. 2000.
34. P. G. Eliseev and A. E. Drakin, "Analysis of the mode internal coupling in InGaAs/GaAs laser-diodes," Laser Physics, vol. 4, no. 3, pp. 485-492, May-June 1994.