Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1476-1480

  Ishihara, T ^a   Lee, S ^a   Akabori, M ^a   Motohisa, J ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRESSES; SURFACE REACTIONS; THERMAL EFFECTS;

VICINAL SURFACES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036531397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02300-4     Document Type: Article

References (9)