1.3-1.6-μm-wavelength quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 B, 2001, Pages

  Matsuda, S ^a   Asahi, H ^a   Mori, J ^a   Watanabe, D ^a   Asami, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

GaAs InAs short period superlattice; Gas source MBE; InP (411)A substrate; PL; Quantum dot; Self formation; STM

Indexed keywords

ELECTROLUMINESCENCE; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

QUANTUM DOT STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035874852     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l586     Document Type: Article

References (7)