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Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5590-5592

Electrical characterization of acceptor levels in Mg-doped GaN

(2) Nakano, Yoshitaka a Jimbo, Takashi b

a Rd Management Section (Japan)

b NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACCEPTOR LEVELS; ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE MEASUREMENTS; ELECTRICAL ACTIVATION; ELECTRICAL CHARACTERIZATION; MEASUREMENT TECHNIQUES; MG-DOPED; SCHOTTKY DIODES; THERMAL ADMITTANCE;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES;

POWER QUALITY;

EID: 18744380133 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1512681 Document Type: Article

Times cited : (31)

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