Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 406-409

  Sawano, K ^a   Kawaguchi, K ^a   Ueno, T ^b   Koh, S ^a   Nakagawa, K ^c   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Chemical mechanical polishing; SiGe; Strain relaxed buffer

Indexed keywords

CHEMICAL MECHANICAL POLISHING; FILM GROWTH; PHOTOLUMINESCENCE; SCATTERING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

SURFACE SMOOTHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037074822     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00843-1     Document Type: Conference Paper

References (12)