Temperature-Dependent Photoluminescence of ZnTe Films Grown on Si Substrates

Chinese Physics Letters

Volumn 20, Issue 11, 2003, Pages 2049-2052

  Shan, Chong Xin ^a   Fan, Xi Wu ^a   Zhang, Ji Ying ^a   Zhang, Zhen Zhong ^a   Lu, You Ming ^a   Liu, Yi Chun ^a   Shen, De Zhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATION; EXCITONS; II-VI SEMICONDUCTORS; IRON; IRON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SILICON; TELLURIUM COMPOUNDS; TEMPERATURE; ZINC COMPOUNDS;

DISSOCIATION CHANNELS; GAUSSIAN LINE; LINES SHAPES; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; NEAR BAND EDGE; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE PROPERTIES; SI SUBSTRATES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ZNTE FILMS;

ORGANOMETALLICS;

EID: 0242408214     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/11/042     Document Type: Article

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