![]() |
Volumn 18, Issue 7, 2001, Pages 982-985
|
Unusual temperature-dependent optical properties of self-organized InAs/GaAs quantum dots at high excitation power
a
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CARRIER CONCENTRATION;
EXCITED STATES;
III-V SEMICONDUCTORS;
INDIUM ARSENIDE;
NANOCRYSTALS;
OPTICAL PROPERTIES;
SEMICONDUCTOR QUANTUM DOTS;
EXCITATION POWER;
FIRST EXCITED STATE;
INAS-GAAS QUANTUM DOTS;
INAS/GAAS;
PHOTOLUMINESCENCE PROPERTIES;
RED SHIFT;
SELF-ORGANISED;
SELF-ORGANIZED QUANTUM DOTS;
TEMPERATURE DEPENDENT;
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;
GROUND STATE;
|
EID: 0035638195
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/18/7/346 Document Type: Article |
Times cited : (4)
|
References (16)
|