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Materials Chemistry and Physics

Volumn 51, Issue 1, 1997, Pages 80-84

The properties of ZnTe layers heteroepitaxially grown on Si using atmospheric metalorganic chemical vapor deposition

(2) Wang, Wen Sheng a Bhat, Ishwara b

a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

Flow modulation epitaxy; Misfit dislocations; Threading dislocations; Zn DETe adduct; ZnTe

Indexed keywords

CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EXCITONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; PHOTOLUMINESCENCE; SILICON; SINGLE CRYSTALS; SURFACE PROPERTIES;

FLOW MODULATION EPITAXY; MISFIT DISLOCATIONS; THREADING DISLOCATIONS; ZINC TELLURIDE;

ZINC ALLOYS;

EID: 0031246636 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(97)80271-4 Document Type: Article

Times cited : (9)

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