Optical properties of ZnMgSeTe quaternary alloys grown on ZnTe substrates by molecular-beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1530-1533

  Chang, J H ^a   Wang, H M ^a   Cho, M W ^a   Makino, H ^a   Hanada, H ^a   Yao, T ^a   Shim, K ^b   Rabitz, H ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b Kyonggi University   (South Korea)

^c PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL IMPURITIES; EMISSION SPECTROSCOPY; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

SINGLE QUANTUM WELLS (SQW); ZINC MAGNESIUM SELENIUM TELLURIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034186866     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591420     Document Type: Article

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