Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface

Applied Physics Letters

Volumn 73, Issue 10, 1998, Pages 1388-1390

  Ko, Hyun Chul ^a   Park, Doo Cheol ^a   Kawakami, Yoichi ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a   Kim, Yang Soo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPOSITION; ELECTRON EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS;

CLEAVING; LOCALIZATION CENTERS; LOCALIZED EXCITONIC EMISSIONS; PHOTOLUMINESCENCE MEASUREMENT; THICKNESS FLUCTUATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032493968     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121953     Document Type: Article

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