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Volumn 18, Issue 5, 2001, Pages 659-661

High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy

(5) Pan, Zhong a Li, Lian He a Du, Yun a Lin, Yao Wang a Wu, Rong Han a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM ALLOYS; MOLECULAR BEAMS; QUANTUM WELL LASERS; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

ANNEALING TIME; CRYSTAL QUALITIES; FULL WIDTHS AT HALF MAXIMUMS; HIGH TEMPERATURE CHARACTERISTICS; PEAK INTENSITY; PEAK WAVELENGTH; PHOTOLUMINESCENCE PEAK; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SINGLE-QUANTUM-WELL LASER; SOLID SOURCE MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0035616812 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/18/5/312 Document Type: Article

Times cited : (5)

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