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Chinese Physics Letters

Volumn 19, Issue 8, 2002, Pages 1203-1206

Anomalous temperature dependence of photoluminescence in GaInNAs/GaAs multiple quantum wells

(6) Liang, Xiao Gan a Jiang, De Sheng a Bian, Li Feng a Pan, Zhong a Li, Lian He a Wu, Rong Han a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

BOUND-STATES; ENERGY POSITION; EXCITATION POWER DENSITY; GAAS MULTIPLE QUANTUM WELLS; GAAS SUBSTRATES; MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE PEAK; PHOTOLUMINESCENCE SPECTRUM; S SHAPE; TEMPERATURE DEPENDENCE;

PHOTOLUMINESCENCE;

EID: 0036677646 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/19/8/352 Document Type: Article

Times cited : (7)

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