High-resolution identification of 1/2 〈110〉 stacking faults in epitaxial Ba0.3Sr0.7TiO3 thin films

Philosophical Magazine

Volumn 83, Issue 13, 2003, Pages 1565-1595

  Lu, C J ^a,c   Bendersky, L A ^a   Chang, K ^b   Takeuchi, I ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c HUBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; STACKING FAULTS; THIN FILMS;

ATOMIC CONFIGURATIONS;

BARIUM COMPOUNDS;

EID: 0242366212     PISSN: 14786435     EISSN: None     Source Type: Journal    
DOI: 10.1080/1478643031000081284     Document Type: Article

References (36)

1. BOURRET-COURCHESNE, E. D., 1996, Appl. Phys. Lett., 68, 1675.
2. BUCK, E. C., 1995, Radial. Effects Defects Solids, 133, 15.
3. CANEDY, C. L., LI, H., ALPAY, S. P., SALAMANCA-RIBA, L., ROYTBURD, A. L., and RAMESH, R., 2000, Appl. Phys. Lett., 77, 1695.
4. CHANG, K. S., ARONOVA, M., FAMODU, O., TAKEUCHI, I., LOFLAND, S. E., HATTRICK-SIMPERS, J., and CHANG, H., 2001, Appl. Phys. Lett., 79, 4411.
5. CHANG, W., GILMORE, C. M., KIM, W. J., POND, J. M., KIRCHOEFER, S. W., QADRI, S. B., CHIRSEY, D. B., and HORWITZ, J. S., 2000, J. appl. Phys., 87, 3044.
6. CHEN, C. L., FENG, H. H., ZHANG, Z., BRAZDEIKIS, A., HUANG, Z. J., CHU, W. K., C. W. CHU, MIRANDA, F. A., VAN KEULS, F. W., ROMANOFSKY, R. R., and LIOU, Y., 1999, Appl. Phys. Lett., 75, 412.
7. DALBERTH, M. J., STAUBER, R. E., PRICE, J. C., ROGERS, C. T., and GALT, D., 1998, Appl. Phys. Lett., 72, 507.
8. EIBL, O., PONGRATZ, P., SKALICKY, P., and SCHMELZ, H., 1988, Phys. Stat. sol. (a), 108, 495.
9. FINDIKOGLU, A. T., JIA, Q. X., REAGOR, D. W., and Wu, X. D., 1995, Microwave opt. Technol. Lett., 9, 306.
10. GAI, P. L., 1997a, Acta crystallogr. B, 53, 346.
11. GAI, P. L., KOURTAKIS, K., COULSON, D. R., and SONNICHSEN, G. C., 1997b, J. Phys. Chem. B, 101, 9916.
12. HYUN, S., LEE, J. H., KIM, S. S., CHAR, K., PARK, S. J., SOK, J., and LEE, E. H., 2000, Appl. Phys. Lett., 77, 3084.
13. IM, J., AUCIELLO, O., BAUMANN, P. K., STREIFFER, S. K., KAUFMAN, D. Y., and KRAUSS, A. R., 2000, Appl. Phys. Lett., 76, 625.
14. JIA, Q. X., FINDIKOGLU, A. T., REAGOR, D., and LU, P., 1998, Appl. Phys. Lett., 73, 897.
15. KIM, W. J., CHANG, W., QADRI, S. B., POND, J. M., KIRCHOEFER, S. W., CHRISEY, D. B., and HORWITZ, J. S., 2000, Appl. Phys. Lett., 76, 1185.
16. LIM, S.-H., and SHINDO, D., 2001, Phys. Rev. Lett., 86, 3795.
17. LU, C. J., BENDERSKY, L. A., CHANG, K., and TAKEUCHI, I., 2003, J. appl. Phys., 93, 512.
18. MAO, Z., and KNOWLES K. M., 1996, Phil. Mag. A, 73, 699.
19. MARSHALL, A. F., CHAR, K., BARTON, R. W., KAPITULNIK, A., and LADERMAN, S. S, 1990, J. Mater. Res., 5, 2049.
20. MATSUNAGA, T., and SAKA, H., 2000, Phil. Mag. Lett., 80, 597.
21. POMPE, W., GONG, X., SUO, Z., and SPECK, J. S., 1993, J. appl. Phys., 74, 6012.
22. POTIN, V., RUTERANA, P., and NOUET, G., 2000, J. Phys.: condens. Matter, 12, 10 301.
23. PRISEDSKY, V. V., PAN'KO, G. F., and KLIMOV, V. V., 1985, Ferroelectrics, 64, 257.
24. RUTERANA, P., BARBARAY, B., BÉRÉ, A., VERMAUT, P., HAIRIE, A., PAUMIER, E., NOUET, G., SALVADOR, A., BOTCHKAREV, A., and MORKOC, H., 1999, Phys. Rev. B, 59, 15917.
25. RYEN, L., WANG, X., PETROV, P., CARLSSON, E., HELMERSSON, U., and OLSSON, E., 1999, J. appl. Phys., 85, 3976.
26. SUZUKI, T., and FUJIMOTO, M., 2001, J. appl. Phys., 89, 5622.
27. SUZUKI, T., NISHI, Y., and FUJIMOTO, M., 1999, Phil. Mag. A, 79, 2461; 2000a, Jap. J. appl. Phys., 39, 192; 2000b, ibid., 39, 5970; 2000c, J. Am. Ceram. Soc., 83, 3185; 2000d, Phil. Mag. A, 80, 621.
28. SUZUKI, T., NISHI, Y., and FUJIMOTO, M., 1999, Phil. Mag. A, 79, 2461; 2000a, Jap. J. appl. Phys., 39, 192; 2000b, ibid., 39, 5970; 2000c, J. Am. Ceram. Soc., 83, 3185; 2000d, Phil. Mag. A, 80, 621.
29. SUZUKI, T., NISHI, Y., and FUJIMOTO, M., 1999, Phil. Mag. A, 79, 2461; 2000a, Jap. J. appl. Phys., 39, 192; 2000b, ibid., 39, 5970; 2000c, J. Am. Ceram. Soc., 83, 3185; 2000d, Phil. Mag. A, 80, 621.
30. SUZUKI, T., NISHI, Y., and FUJIMOTO, M., 1999, Phil. Mag. A, 79, 2461; 2000a, Jap. J. appl. Phys., 39, 192; 2000b, ibid., 39, 5970; 2000c, J. Am. Ceram. Soc., 83, 3185; 2000d, Phil. Mag. A, 80, 621.
31. SUZUKI, T., NISHI, Y., and FUJIMOTO, M., 1999, Phil. Mag. A, 79, 2461; 2000a, Jap. J. appl. Phys., 39, 192; 2000b, ibid., 39, 5970; 2000c, J. Am. Ceram. Soc., 83, 3185; 2000d, Phil. Mag. A, 80, 621.
32. SUZUKI, T., UENO, M., NISHI, Y., and FUJIMOTO, M., 2001b, J. Am. Ceram. Soc., 84, 200.
33. TAKEUCHI, I., CHANG, H., GAO, C., SCHULTZ, P. G., XIANG, X. D., SHARMA, R. P., DOWNES, M. J., and VENKATESAN, T., 1998, Appl. Phys. Lett., 73, 894.
34. VARADAN, V. K., GHODGAONKAR, D. K., VARADAN, V. V., KELLY, J. F., and GLIKERDAS, P., 1992, Microwave J., 35, 116.
35. WITEK, S., and SMYTH, D. M., 1984, J. Am. Ceram. Soc., 67, 372.
36. WUNDERLICH, W., FUJIMOTO, M., and OHSATO, H., 2001, Mater. Sci. Engng, A309-A310, 148.