HREM microstructural studies on the effect of steam exposure and cation promoters on vanadium phosphorus oxides: New correlations with n-butane oxidation reaction chemistry

Journal of Physical Chemistry B

Volumn 101, Issue 48, 1997, Pages 9916-9925

  Gai, Pratibha L ^a   Kourtakis, Kostantinos ^a   Coulson, D Robert ^a   Sonnichsen, George C ^a  

^a DUPONT COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BUTANE; CATALYST ACTIVITY; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; ELECTRON MICROSCOPY; IONS; IRON; OXIDATION; OXYGEN; REACTION KINETICS; STEAM;

CATIONS; MALEIC ANHYDRIDE; VANADIUM PHOSPHORUS OXIDES;

VANADIUM COMPOUNDS;

EID: 0031273032     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp971683g     Document Type: Article

References (33)

1. Hodnett, B. K. Catal. Rev.-Sci. Eng. 1985, 27, 323.
2. Bordes, E. Catal. Today 1987, 1, 499.
3. Centi, G. (ed. sp. vol.) Catal. Today 1993, 16, 1.
4. Horowitz, H. S.; et al. Appl. Catal. 1988, 38, 193.
5. Adelouahabab, F.; Volta, J. C.; et al. J. Catal. 1991, 128, 248.
6. Koyano, G.; Okuhara, T.; Misono, M. Catal. Lett. 1995, 32, 205.
7. Kiely, C.; Sajip, S.; Ellison, I.; Santanes, M.; Hutchings, G. J.; Volta, J. C. Catal. Lett. 1995, 33, 357.
8. Boyes, E. D.; Gai, P. L. Ultramicroscopy 1997, 67, 219. In Situ Microscopy in Materials Research; Gai, P. L., Eds.; Kluwer Academic Publishers: Dordrecht, 1997.
9. Boyes, E. D.; Gai, P. L. Ultramicroscopy 1997, 67, 219. In Situ Microscopy in Materials Research; Gai, P. L., Eds.; Kluwer Academic Publishers: Dordrecht, 1997.
10. Gai, P. L.; Kourtakis, K. Science 1995, 267, 661.
11. Gai, P. L.; Kourtakis, K.; Coulson, R.; Sonnichsen, G. In Catalyst Materials for High-Temperature Processes; Ramesh, K. S., Misono, M., Gai, P. L., Eds.; American Ceramic Soc.; Westerville, OH, 1997; Vol. 73.
12. Gai, P. L. Acta Cryslallogr. 1997, B53, 346.
13. Gai, P. L.; Torardi, C. C. In in Situ Electron & Tunneling Microscopies; Sharma, R., Gai, P. L., Gajdarziska, M., Sinclair, R., Whitman, L., Eds.; Materials Research Society; Warrendale, PA, 1996; Vol. 404.
14. Katsumoto, K.; Marquis M. Chevon Co. U.S. Parent 4,132,670.
15. Gordunova, Yu. E.; Linde, S. Sov. Phys.-Dokl. (Engl. Trans.) 1979, 24, 138.
16. Gai, P. L.; Thomas, J. M.; Wright, P.; Jones, R.; Natarajan, S.; Chen, J.; Xu, R. J. Phys. Chem. 1992, 96, 8206.
17. Gai, P. L. Philos. Mag. A 1981, 43, 841.
18. Gai, P. L. Catal. Rev.-Sci. Eng. 1992, 34, 1.
19. Tomita, S.; Kawakami, T.; Suwa, H.; Ihara, T., Mitsubishi Chem. Ind. Japan Patent JP 05043567 A2 930223, 1992.
20. Ebner, J.; Andrews, W., Monsanto Co. U.S. US 5137860 A 920811.
21. Ootake, M.; T. Kawakami, T.; Otake, M., Mitusbishi Kasei Corp. Japan Patent JP 01201016 A2 890814, 1988.
22. Arnold, E. W.; Sundaresan, S. Appl. Catal. 1988, 41, 225.
23. Cornaglia, A.; et al. Appl. Catal. 1991, 74, 15.
24. Lerou J. J.; Mills, P. L. Proceedings Process Techn. International Conference; Weijenen, M., et al., Eds.; Kluwer Academic Publ.: Dordrecht, 1993; p 175.
25. Click, G.; Barone, B., Denka Chem. Corp. U.S. 4515899 A 850507, 1985.
26. Nakamura, M.; Kawai, K.; Fujiwara, Y. J. Catal. 1974, 34, 345.
27. Bej, S. K.; Rao, M. S. Appl. Catal. 1992, A83, 149.
28. Hutchings, G. J.; Higgins, R. J. Catal. 1996, 162, 153.
29. Kourtakis K.; Sonnichsen, G., U.S. Patent 543532. Kourtakis, K.; Sonnichsen, G.; Coulson, D. R.; Gai, P. L. Manuscript in preparation.
30. Kourtakis K.; Sonnichsen, G., U.S. Patent 543532. Kourtakis, K.; Sonnichsen, G.; Coulson, D. R.; Gai, P. L. Manuscript in preparation.
31. Gai, P. L.; et al. Nature 1990, 348, 430.
32. 11 have shown that the displacement vector is approximately parallel to the trace of (201) planes (lies in the plane of shear) and to the defect directions.
33. Gai, P. L. J. Solid State Chem. 1993, 104, 119.