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Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10301-10306

HREM study of stacking faults in GaN layers grown over sapphire substrate

(3) Potin, V a Ruterana, P a Nouet, G a

a LABORATOIRE CRISMAT (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES;

INVERSION DOMAIN BOUNDARIES; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034499442 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/12/49/332 Document Type: Article

Times cited : (83)

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