New source of stacking faults in heteroepitaxial systems

Physical Review Letters

Volumn 86, Issue 17, 2001, Pages 3795-3798

  Lim, S H ^a,c   Shindo, D ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b TOHOKU UNIVERSITY   (Japan)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; LITHIUM COMPOUNDS; ZINC OXIDE;

HETEROEPITAXIAL SYSTEMS; NUMERICAL IMAGE COMPUTATION; SELECTED AREA DIFFRACTION;

STACKING FAULTS;

EID: 18144441054     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.3795     Document Type: Article

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