Surface trapping effects observed in AlGAN/GaN HFETs and heterostructures

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 470-476

  Koley, G ^a   Tilak, V ^a   Cha, Ho Young ^a   Eastman, L F ^a   Spencer, M G ^a  

^a Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTROSTATICS; HETEROJUNCTIONS; HOLE TRAPS; SEMICONDUCTOR QUANTUM WELLS; THERMIONIC EMISSION; TRANSIENTS;

SURFACE TRAPPINGS;

GATES (TRANSISTOR);

EID: 0242365521     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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3. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Applied Physics Letters, 1997 vol. 71, No. 19, pp. 2794-2796.
4. O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," Journal of Applied Physics, 1999, vol. 85, No. 6, pp. 3222-3233.
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7. Steven C. Binari et al., "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices, 2001, vol. 48, No. 3, pp. 465-471.
8. A. Tarakji, G. Simin, N. Iinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska, "Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors," Applied Physics Letters, 2001, vol. 78, No. 15, pp. 2169-2171.
9. Bruce M. Green, Kenneth K. Chu, E. Martin Chumbes, Joseph A. Smart, James R. Sheary, and Lester F. Eastman, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's," IEEE Electron Device Letters, 2000, vol. 21, No. 6, pp. 268-270.
10. J. A. Smart, A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy, "AlGaN/GaN heterostructures on insulating AlGaN nucleation layers," Applied Physics Letters, 1999, vol. 75, No. 3, pp. 388-390.
11. G. Koley and M. G. Spencer, "Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy," Journal of Applied Physics, 2001, vol. 90, No. 1, pp. 337-344.
12. G. Koley, Ho-Young Cha, C. I. Thomas, and M. G. Spencer, submitted to Applied Physics Letters.