Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGe x(x=0,0.6)/HfO2 gate stack

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4608-4613

  Kang, Sung Kwan ^a   Nam, Suheun ^a   Min, Byoung Gi ^a   Nam, Seok Woo ^a   Ko, Dae Hong ^a   Cho, Mann Ho ^b  

^a Yonsei University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); GRAIN BOUNDARIES; LEAKAGE CURRENTS; MOS CAPACITORS; THIN FILMS;

PARTIAL REDUCTION;

SURFACE REACTIONS;

EID: 0142120835     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605257     Document Type: Article

References (18)

1. A. Callegari, E. Cariter, M. Gribelyuk, H. F. Okorn-Schmidt, and T. Zabel, J. Appl. Phys. 90, 6466 (2001).
2. J. J. Chambers and G. N. Parsons, J. Appl. Phys. 90, 918 (2001).
3. J.-P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, J. Appl. Phys. 90, 3476 (2001).
4. K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. Nieh, S. Krishnan, and J. C. Lee, Reliability Physics Symposium Proceedings, 2002, p. 419.
5. S. Gopalan, K. Onishi, R. Nieh, C. S. Kang, R. Choi, H.-J. Cho, and J. C. Lee, Appl. Phys. Lett. 80, 4416 (2000).
6. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
7. D. C. Gilmer et al., Appl. Phys. Lett. 81, 1288 (2001).
8. C. H. Lee, H. F. Luan, W. P. Bai, S. J. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2000, 27 (2000).
9. H. Watanabe and N. Ikarashi, Appl. Phys. Lett. 80, 559 (2002).
10. W. C. Lee, T. J. King, and C. Hu, IEEE Electron Device Lett. 20, 9 (1999).
11. S.-K. Kang, J. J. Kim, D.-H. Ko, H. B. Kang, C. W. Yang, T. H. Ahn, I. S. Yeo, T. W. Lee, and Y. H. Lee, J. Electrochem. Soc. 150, G167 (2003).
12. S. K. Kang, B. G. Min, J. H. Yoo, S. W. Nam, D.-H. Ko, H. B. Kang, C. W. Kang, and M.-H. Cho, Electrochem. Solid-State Lett. 5, G113 (2002).
13. V. Z.-Q. Li, M. R. Mirabedini, R. T. Kuehn, J. J. Wortman, and M. C. Öztürk, Tech. Dig. - Int. Electron Devices Meet. 1997, 833 (1997).
14. S. Aggarwal, S. R. Perusse, C. W. Tipton, R. Ramesh, H. D. Drew, T. Venkatesan, D. B. Romero, V. B. Podobedov, and A. Weberpp, Appl. Phys. Lett. 73, 1973 (1998).
15. J. K. Lee, Y. Park, and I. Chung, J. Appl. Phys. 92, 2724 (2002).
16. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, in Handbook of X-Ray Photoelectron Spectroscopy, edited by J. Chastain (Perkin-Elmer Corp., Eden Prairie, MN, 1992), pp. 56, 168.
17. K. Muraoka, Appl. Phys. Lett. 80, 4516 (2002).
18. I. Barin, in Thermochemical Data of Pure Substances, edited by H. F. Ebel and C. Dyllick-Brenzinger (VCH, New York, 1989).