Investigation of hydrogen-induced degradation in Pb(Zr xTi 1-x)O 3 thin film capacitors for the application of memory devices

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2724-2728

  Lee, June Key ^a   Park, Youngsoo ^a   Chung, Ilsub ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL RATIO; ELECTRODE STRUCTURE; HYDROGEN ANNEAL; HYDROGEN-INDUCED DEGRADATION; HYDROXYL GROUPS; NEGATIVE CHARGE; POLING STATE; PROCESS PARAMETERS; PT ELECTRODE; PZT; PZT FILM; SECONDARY ION MASS SPECTROSCOPY; THIN-FILM CAPACITORS;

CAPACITORS; DEGRADATION; LEAD; PLATINUM; SECONDARY ION MASS SPECTROMETRY; THIN FILM CIRCUITS; ZIRCONIUM;

HYDROGEN;

EID: 0036733983     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499976     Document Type: Article

References (20)

1. J.-P. Han and T. P. Ma, Appl. Phys. Lett. 71, 1267 (1997). apl APPLAB 0003-6951
2. Y. Shimamoto, K. Kushida-Abdelghafar, J. Miki, and Y. Fujisaki, Appl. Phys. Lett. 70, 3096 (1997). apl APPLAB 0003-6951
3. Y. Fujisaki, K. Kushida-Abdelghafar, Y. Shimamoto, and H. Miki, J. Appl. Phys. 82, 341 (1997). jap JAPIAU 0021-8979
4. K. Christman, G. Ertl, and T. Pignet, Surf. Sci. 54, 365 (1976). sus SUSCAS 0039-6028
5. H. Nakatsuji, Y. Matsuzaki, and T. Yonezawa, J. Chem. Phys. 88, 5759 (1988). jcp JCPSA6 0021-9606
6. H. Miki, K. Kushida-Abdelghafar, K. Torii, and Y. Fujisaki, Jpn. J. Appl. Phys., Part 1 36, 1132 (1997). jjb JAPNDE 0021-4922
7. Y. Park, J. K. Lee, I. Chung, and J.-Y. Lee, Jpn. J. Appl. Phys., Part 2 38, L577 (1999). jjc JAPLD8 0021-4922
8. B. Koo, Y. Song, S. Lee, D. Jung, H. Kim, S. Joo, Y. Lee, and K. Kim, IEEE Electron Device Lett. 21, 280 (2000). edl EDLEDZ 0741-3106
9. T. Nakura, H. Mori, N. Inoue, N. Ikarashi, S. Takahashi, and N. Kasai, Tech. Dig.-Int. Electron Devices Meet., 801 (1999).
10. N. Ikarashi, Appl. Phys. Lett. 73, 1955 (1998). apl APPLAB 0003-6951
11. S. Aggarwal, S. R. Perusse, C. W. Tipton, R. Ramesh, H. D. Drew, T. Venkatesan, D. B. Romero, V. B. Podobedov, and A. Weber, Appl. Phys. Lett. 73, 1973 (1998). apl APPLAB 0003-6951
12. W. I. Lee, J. K. Lee, J. S. Lee, and I. K. Yoo, Integr. Ferroelectr. 10, 145 (1995). itf IFEREU 1058-4587
13. J. K. Lee, T.-Y. Kim, I. Chung and S. B. Desu, Appl. Phys. Lett. 75, 334 (1999). apl APPLAB 0003-6951
14. J. K. Lee, Y. Park, I. Chung, S. J. Oh, D. J. Jung, B. Koo, S. Y. Lee, K. Kim, and S. B. Desu, J. Appl. Phys. 86, 6376 (1999). jap JAPIAU 0021-8979
15. S. Y. Lee, D. J. Jung, Y. S. Song, B. J. Koo, S. O. Park, H. J. Cho, S. J. Oh, D. S. Hwang, J. K. Lee, Y. S. Park, I. S. Chung, and K. Kim, VLSI Tech. Symposium, 1999, p. 141.
16. D. J. Jung, S. Y. Lee, B. J. Koo, Y. S. Hwang, D. W. Shin, J. W. Lee, Y. S. Chun, S. H. Shin, M. H. Lee, H. B. Park, K. Kim, and J. G. Lee, VLSI Tech. Symposium 1998, p. 122.
17. Y. Park, J. K. Lee, I. Chung, and J.-Y. Lee, J. Appl. Phys. 89, 2327 (2001). jap JAPIAU 0021-8979
18. E. G. Lee, D. J. Wouters, G. Willems, and H. E. Maes, Appl. Phys. Lett. 69, 1223 (1996). apl APPLAB 0003-6951
19. G.-C. Yi and B. W. Wessels, Appl. Phys. Lett. 71, 327 (1997). apl APPLAB 0003-6951
20. M. W. Roberts and C. S. Mckee, Chemistry of the Metal-Gas Interface (Clarendson, Oxford, 1978), p. 383.