Single gate 0.15 μm CMOS devices fabricated using RTCVD in-situ boron doped Si1-xGex gates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 833-836

  Li, Vivian Z Q ^a   Mirabedini, Mohammad R ^a   Kuehn, Richard T ^a   Wortman, Jimmie J ^a   Ozturk, Mehmet C ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 84886448078     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)