Microscale measurement of stresses in a silicon flexure using Raman spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 741, Issue , 2002, Pages 219-224

  Srikar, V T ^a   Swan, A K ^b   Goldberg, B B ^b   Unlu M S ^b   Spearing, S M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING STRENGTH; MATHEMATICAL MODELS; PLASTIC DEFORMATION; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; STRESS CONCENTRATION; STRESSES; THICKNESS MEASUREMENT;

MICROSCALE MEASUREMENT; RAMAN SHIFT; SILICON FLEXURE;

SILICON;

EID: 0043011501     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-741-j9.5     Document Type: Conference Paper

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