Aluminum Schottky contacts to n-type 4H-SiC

Journal of Electronic Materials

Volumn 31, Issue 10 SPEC., 2002, Pages 1090-1095

  Harrell, William R ^a   Zhang, Jingyan ^a   Poole, Kelvin F ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

4H silicon carbide; Al contacts; Schottky diodes

Indexed keywords

ALUMINUM; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC FIELDS; FERMI LEVEL; SILICON CARBIDE; SURFACE TREATMENT;

THIN INTERFACIAL LAYERS;

SCHOTTKY BARRIER DIODES;

EID: 0036810476     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0047-1     Document Type: Conference Paper

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