Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 380-383

  Wolan, J T ^a   Grayson, B A ^a   Kohlscheen, J ^a   Emirov, Y ^a   Schlaf, R ^a   Swartz, W ^b   Saddow, S E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b Constellation Technology ^*  (United States)

Author keywords

Atomic force microscopy; Hydrogen etching; Sacrificial oxidation; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; ETCHING; GRAPHITE; HYDROFLUORIC ACID; MORPHOLOGY; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROGEN ETCHING;

SILICON CARBIDE;

EID: 0036575870     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0087-6     Document Type: Article

References (13)