Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs

Materials Characterization

Volumn 50, Issue 2-3, 2003, Pages 135-147

  Diniz, J A ^a   Doi, I ^a   Swart, J W ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

GaAs substrate; Insulators; SiOxNy

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL BONDS; ELECTRIC INSULATORS; ELECTRON CYCLOTRON RESONANCE; OXIDATION; PLASMA APPLICATIONS; SILICON;

FILM DEPOSITION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0141884978     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1044-5803(03)00082-2     Document Type: Conference Paper

References (21)

1. 2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electric limits. J. Appl. Phys. 90:2001;2057-2121.
2. x. Solid State Electron. 45:2001;1265-1270.
3. Ting S.F., Fang Y.K., Chen C.H., Yang C.W., Hsieh W.T., Ho J.J.et al. The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyond. IEEE Electron Device Lett. 22:2001;327-329.
4. 2 MOSFET gate dielectric. IEEE Electron Device Lett. 22:2001;324-326.
5. Moshkalyov S.A., Diniz J.A., Swart J.W., Tatsch P.J., Machida M. Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in N2/Ar/SiH4. J. Vac. Sci. Technol. B. 15:1997;2682-2687.
6. 2. J. Electrochem. Soc. 145:1998;731-735.
7. 4/Si interface control layer formed by MBE and in situ ECR plasma nitridation. Appl. Surf. Sci. 123/124:1998;599-602.
8. 4. J. Electrochem. Soc. 145:1998;3957-3962.
9. Niimi H., Koh K., Lucovsky G. Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation. Nucl. Instrum. Methods Phys. Res. B127:1997;364-368.
10. Sung K.T., Pang S.W. Oxidation of silicon in an oxygen plasma generated by a multipolar electron cyclotron resonance source. J. Vac. Sci. Technol. B. 10:1992;2211-2216.
11. Yoshioka R.T., de Barros L.E.M. Jr., Swart J.W., Bettini J., de Carvalho M.G., Redolfi A.C.et al. Tuning of HBT fabrication process on III-V compounds. J. Solid-State Devices Circuits. 07:1999;1-6.
12. Diniz J.A., Sotero A.P., Lujan G.S., Tatsch P.J., Swart J.W. High quality of ultra-thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidation. Nucl. Instrum. Methods B. 166-167:2000;64-69.
13. Diniz J.A., de Barros L.E.M. Jr., Yoshioka R.T., Lujan G.S., Danilov I., Swart J.W. One step silicon nitride passivation by ECR-CVD for hetero-structure transistors and MIS devices. Proceedings Symposium Compound Semiconductor Surface Passivation and Novel Device Processing. vol. 573:1999 April 5-7;137-142 Materials Research Society, San Francisco (CA).
14. Houng M.P., Wang Y.H., Huang C.J., Huang S.P., Horng J.H. Quality optimization of liquid phase deposition SiO2 films on gallium arsenide. Solid State Electron. 44:2000;1917-1923.
15. Huang C.J. Proper annealing for enhanced quality of silicon dioxide thin film on gallium arsenide. Electrochem. Solid-State Lett. 4:2001;F21-F23.
16. Yang Y.F., Hsu C.C., Yang E.S. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors. IEEE Trans. Electron Devices. 41:1994;643.
17. Lange P., Bernt H., Hartmannsgruber E., Naumann F. Growth-rate and characterization of silicon oxide films grown in N2O atmosphere in a rapid thermal processor. J. Electrochem. Soc. 141:1994;259-263.
18. Diniz J.A., Doi I., Swart J.W. Characteristics of silicon oxynitride made by ECR plasmas. Proceedings 199th Meeting of the Electrochemical Society - Sixth International Symposium on Silicon Nitride and Silicon Oxide Thin Insulating Films. vol. 2001-7:2001 (March 25-29);156-161 The Electrochemical Society, Washington, DC.
19. Tamaki Y., Isomoe S., Mizuo S., Higuchi H. Evaluation of dislocation generation at SI3N4 film edges on silicon substrates by selective oxidation. J. Electrochem. Soc. 128:1981;644-648.
20. Fay J.L., Beluch J., Despax B., Bafleur M., Sarrabayrouse G. Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant. Microelectron. Reliab. 40(4-5):2000;593-596.
21. Fay J.L., Beluch J., Despax B., Sarrabayrouse G. Feasibility of an isolation by local oxidation of silicon without field implant. Solid State Electron. 45(8):2001;1257-1263.