One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices

Materials Research Society Symposium - Proceedings

Volumn 573, Issue , 1999, Pages 137-142

  Din, J A ^a   De Barros Jr , L E M ^a   Yoshioka, R T ^a   Lujan, G S ^a   Danilov, I ^a   Swart, J W ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; MIS DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; VOLTAGE MEASUREMENT;

SURFACE CHARGE DENSITY;

SEMICONDUCTING FILMS;

EID: 0032688649     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)

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