Characterization of GaAs(110) nitrided by an electron-cyclotron resonance plasma source using N2

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 731-735

  Landheer, D ^a   Rajesh, K ^a   Hulse J E ^a   Sproule, G I ^a   McCaffrey, J ^a   Quance, T ^a   Graham, M J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; INTERFACES (MATERIALS); NITRIDING; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SOURCES; SILANES; SILICON NITRIDE; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE DEPENDENT X RAY PHOTOELECTRON SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE PLASMA SOURCE; INTERFACE STATE DENSITIES; SINGLE WAVELENGTH IN SITU ELLIPSOMETRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034140758     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393260     Document Type: Article

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