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Electrochemical and Solid-State Letters

Volumn 4, Issue 10, 2001, Pages

Proper annealing for enhanced quality of silicon dioxide thin film on gallium arsenide

(1) Huang, C J a

a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; FILM GROWTH; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THIN FILMS; ULSI CIRCUITS;

CHARGE DENSITY; GROWTH RATE; LIQUID PHASE DEPOSITION; VACUUM DEPOSITION;

SILICA;

EID: 0035496801 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1398558 Document Type: Article

Times cited : (4)

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