Surface passivation of GaAs with ultrathin Si 3 N 4 /Si interface control layer formed by MBE and in situ ECR plasma nitridation

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 599-602

  Hashizume, Tamotsu ^a   Ikeya, Kengo ^a   Mutoh, Morimichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

ECR; Nitridation; PL; Si interface control layer; Surface passivation; XPS

Indexed keywords

BAND STRUCTURE; ELECTRON CYCLOTRON RESONANCE; FERMI LEVEL; FERMI SURFACE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDING; PASSIVATION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SILICON NITRIDE;

PLASMA NITRIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 19244369340     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00576-X     Document Type: Article

References (11)

1. H. Hasegawa, M. Akazawa, K. Matsuzaki, H. Ishii, H. Ohno, Jpn. J. Appl. Phys. 27 (1988) L2265.
2. S. Kodama, S. Koyanagi, T. Hashizume, H. Hasegawa, Jpn. J. Appl. Phys. 34 (2B) (1995) 1143.
3. H. Hasegawa, M. Akazawa, H. Ishii, K. Matsuzaki, J. Vac. Sci. Technol. B 7 (1989) 870.
4. D.S.L. Mui, D. Biswas, J. Reed, L. Demirel, S. Strite, H. Morkoç, Appl. Phys. Lett. 60 (1992) 2511.
5. C.G. Van de Walle, Phys. Rev. 39 (1989) 1871.
6. P. Friedel, J.P. Landesman, P. Boher, J. Schneider, J. Vac. Sci. Technol. B 5 (1987) 1129.
7. L.A. DeLouise, J. Vac. Sci. Technol. A 10 (1992) 1637.
8. X.Y. Zhu, M. Wolf, J.M. White, J. Vac. Sci. Technol. A 11 (1993) 838.
9. F. Bozso, Ph. Avouris, Phys. Rev. B 38 (1988) 3937.
10. M.D. Pashley, K.W. Haberern, Phys. Rev. Lett. 67 (1991) 2697.
11. Y. Ishikawa, T. Fukui, H. Hasegawa, J. Vac. Sci. Technol. B 15 (1997) 1163.