Threshold voltage and charge control considerations in double quantum well Si/Si1-xGEx p-Type MOSFETs

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 951-956

  Yousif, M Y A ^a   Nur, O ^a   Chretien, O ^a   Fu, Y ^a   Willander, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CHARGE; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

GATE CHARGE CONTROL;

MOSFET DEVICES;

EID: 0032090729     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00115-4     Document Type: Article

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