A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

Journal of Applied Physics

Volumn 88, Issue 8, 2000, Pages 4558-4562

  Chen, X D ^a   Fung, S ^a   Beling, C D ^a   Gong, M ^b   Henkel, T ^c   Tanoue, H ^c   Kobayashi, N ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b SICHUAN UNIVERSITY   (China)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001142196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1287232     Document Type: Article

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